Related papers: Spin manipulation and spin dephasing in quantum do…
Spin manipulation is one of the most critical challenges to realize spin-based logic devices and spintronic circuits. Graphene has been heralded as an ideal material to achieve spin manipulation but so far new paradigms and demonstrators…
A scanning tunneling microscope can probe the inelastic spin excitations of a single magnetic atom in a surface via spin-flip assisted tunneling in which transport electrons exchange spin and energy with the atomic spin. If the inelastic…
We use quantum optimal control theory algorithms to design external electric fields that drive the coupled spin and orbital dynamics of an electron in a double quantum dot, subject to the spin-orbit interaction and Zeeman magnetic fields.…
Spin relaxation in the impurity band of a 2D semiconductor with spin-split spectrum in the external magnetic field is considered. Several mechanisms of spin relaxation are shown to be relevant. The first one is attributed to phonon-assisted…
The silicon vacancy in silicon carbide is a strong emergent candidate for applications in quantum information processing and sensing. We perform room temperature optically-detected magnetic resonance and spin echo measurements on an…
Spin-orbit (SO) interaction critically influences electron spin dynamics and spin transport in bulk semiconductors and semiconductor microstructures. This interaction couples electron spin to dc and ac electric fields. Spin coupling to ac…
The authors have investigated the possibility of utilizing spin waves for inter- and intra-chip communications, and as logic elements using both simulations and experimental techniques. Through simulations it has been shown that the decay…
Disorder in spin-orbit (SO) coupling is an important feature of real low-dimensional electron structures. We study spin relaxation due to such a disorder as well as resulting abilities of spin manipulation. The spin relaxation reveals…
We propose and analyze a new method for manipulation of a heavy hole spin in a quantum dot. Due to spin-orbit coupling between states with different orbital momenta and opposite spin orientations, an applied rf electric field induces…
Electron spin oriented along an external magnetic field is subject to longitudinal spin relaxation with characteristic time $T_1$. The corresponding decay is nonoscillating, so one cannot readily ascribe $T_1$ to a certain $g$ factor. This…
We have analyzed effects of the hyperfine interaction on electric dipole spin resonance when the amplitude of the quantum-dot motion becomes comparable or larger than the quantum dot's size. Away from the well known small-drive regime, the…
We investigate spin relaxation in a silicon double quantum dot via leakage current through Pauli blockade as a function of interdot detuning and magnetic field. A dip in leakage current as a function of magnetic field on a \sim 40 mT field…
System consisting of a number of trapped atoms evolving under the influence of external inhomogenous magnetic field undergoes spin dephasing: classically, since each atom feels different field along its trajectory, the spin rotation rates…
The nuclear spin of a phosphorus atom in silicon has been used as a quantum bit in various quantum-information experiments. It has been proposed that this nuclear-spin qubit can be efficiently controlled by an ac electric field, when…
We study spin-orbit mediated relaxation and dephasing of electron spins in quantum dots. We show that higher order contributions provide a relaxation mechanism that dominates for low magnetic fields and is of geometrical origin. In the…
A longitudinal electric field is used to control the transit time (through an undoped silicon vertical channel) of spin-polarized electrons precessing in a perpendicular magnetic field. Since an applied voltage determines the final spin…
Spin-orbit coupling is a source of strong spin dephasing in two- and three-dimensional semiconducting systems. We report that spin dephasing in a two-dimensional electron gas can be suppressed by introducing a quantum point contact.…
The spin and density response functions in the random phase approximation (RPA) are derived by linearizing the kinetic equation including a magnetic field, the spin-orbit coupling, and mean fields with respect to an external electric field.…
Hole spins in group IV quantum dots are a highly promising way to develop CMOS compatible spin qubits owing to their inherent spin-orbit coupling, which enables fast, coherent, and electrical spin control. However, spin-orbit coupling not…
An electron spin qubit in silicon quantum dots holds promise for quantum information processing due to the scalability and long coherence. An essential ingredient to recent progress is the employment of micromagnets. They generate a…