Related papers: Purely electronic nanometallic ReRAM
For neuromorphic engineering to emulate the human brain, improving memory density with low power consumption is an indispensable but challenging goal. In this regard, emerging RRAMs have attracted considerable interest for their unique…
Metallic oxides encased within Metal-Insulator-Metal (MIM) structures can demonstrate both unipolar and bipolar switching mechanisms, rendering them the capability to exhibit a multitude of resistive states and ultimately function as memory…
Reversible computing is a paradigm of computation that reflects physical reversibility, one of the fundamental microscopic laws of Nature. In this survey, we discuss topics on reversible logic elements with memory (RLEM), which can be used…
DRAM-based main memory and its associated components increasingly account for a significant portion of application performance bottlenecks and power budget demands inside the computing ecosystem. To alleviate the problems of storage density…
We describe a new class of systems exhibiting return point memory (RPM) that are different from those discussed before in the context of ferromagnets. We show numerically that one dimensional random Ising antiferromagnets have RPM, when…
Dynamic random access memory (DRAM) is critical to classical computing but notably absent in current superconducting quantum processors. Integrating high-coherence memory units would enable resource-efficient control of logical qubits and…
Deep Neural Networks (DNNs), as a subset of Machine Learning (ML) techniques, entail that real-world data can be learned and that decisions can be made in real-time. However, their wide adoption is hindered by a number of software and…
Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing devices with unprecedented speed, energy efficiency, and bit density. Realizing this potential requires AFM devices with simultaneous electrical writing and…
Analog Content Addressable Memories (aCAMs) have proven useful for associative in-memory computing applications like Decision Trees, Finite State Machines, and Hyper-dimensional Computing. While non-volatile implementations using FeFETs and…
Superlattices may play an important role in next generation electronic and spintronic devices if the key-challenge of the reading and writing data can be solved. This challenge emerges from the coupling of low dimensional individual layers…
Crossbar arrays using emerging non-volatile memory technologies such as Resistive RAM (ReRAM) offer high density, fast access speed and low-power. However the bandwidth of the crossbar is limited to single-bit read/write per access to avoid…
Memristors as emergent nano-electronic devices have been successfully fabricated and used in non-conventional and neuromorphic computing systems in the last years. Several behavioral or physical based models have been developed to explain…
Fast cryogenic switches with ultra-low power dissipation are highly sought-after for control electronics of quantum computers, space applications and next generation logic circuits. However, existing high-frequency switches are often bulky,…
Non-volatile memory (NVM) technologies such as PCM, ReRAM and STT-RAM allow processors to directly write values to persistent storage at speeds that are significantly faster than previous durable media such as hard drives or SSDs. Many…
We have carried out a preliminary design and simulation of a single-electron resistive switch based on a system of two linear, parallel, electrostatically-coupled molecules: one implementing a single-electron transistor and another serving…
Ternary content addressable memory (TCAM) has been a critical component in caches, routers, etc., in which density, speed, power efficiency, and reliability are the major design targets. There have been the conventional low-write-power but…
Resistive random-access memory (RRAM) provides an excellent platform for analog matrix computing (AMC), enabling both matrix-vector multiplication (MVM) and the solution of matrix equations through open-loop and closed-loop circuit…
Power consumption is the main limitation in the development of new high performance random access memory for portable electronic devices. Magnetic RAM (MRAM) with CoFeB/MgO based magnetic tunnel junctions (MTJs) is a promising candidate for…
Resistive Random Access Memory (ReRAM) based Processing In Memory (PIM) Accelerator has emerged as a promising computing architecture for memory intensive applications, such as Deep Neural Networks (DNNs). However, due to its immaturity,…
A dynamic systems model is proposed describing memory resistors which include a filament conductive bridge. In this model the system state is defined by both a dynamic tunneling barrier (associated with the filament-electrode gap) and a…