Related papers: Adjustable current-induced magnetization switching…
We summarize our recent findings on how current-driven magnetization switching and magnetoresistance in nanofabricated magnetic multilayers are affected by varying the spin-scattering properties of the non-magnetic spacers, the relative…
We develop the theory of magnetic domain wall motion in coupled double-layer systems where electrons can hop between the layers giving rise to an antiferromagnetic coupling. We demonstrate that the force from the interlayer coupling drives…
By means of local ion implantation, we investigated the influence of lateral interface on current-induced magnetic switching by spin-orbit torque in a perpendicularly magnetized Pt/Co/Ta multilayer. The experimental results show that, in…
Magnetization switching by current-induced spin-orbit torques (SOTs) is of great interest due to its potential applications for ultralow-power memory and logic devices. In order to be of technological interest, SOT effects need to switch…
Spin spirals form inside the magnetic layers of antiferromagnetic and noncollinearly-coupled magnetic multilayers in the presence of an external magnetic field. This spin structure can be modeled to extract the direct exchange stiffness of…
A study of dynamic and reversible voltage controlled magnetization switching in ferromagnetic Co/Pt thin film with perpendicular magnetic anisotropy at room temperature is presented. The change in the magnetic properties of the system is…
We proposed a novel multilayer structure to realize the deterministic switching of perpendicularly magnetized layers by spin orbital torque from the spin Hall effect through stray field engineering. In our design, a pinned magnetic layer is…
Electrical manipulation of spins is essential to design state-of-the-art spintronic devices and commonly relies on the spin current injected from a second heavy-metal material. The fact that chiral antiferromagnets produce spin current…
The switching of magnetic layers is studied under the action of a spin current in a ferromagnetic metal/non-magnetic metal/ferromagnetic metal spin valve. We find that the main contribution to the switching comes from the non-equilibrium…
We study current-driven magnetization switching in nanofabricated magnetic trilayers, varying the magnetoresistance in three different ways. First, we insert a strongly spin-scattering layer between the magnetic trilayer and one of the…
We propose the spin swapping effect for an exchange magnon spin current in a perpendicularly magnetized ferromagnetic medium with in plane anisotropy on the surface. The excitation of a magnon current flowing along an in-plane direction…
A new mechanism different from the spin accumulation picture is proposed for the current induced magnetization switching in magnetic tunnel junctions by taking into account the effect of the electron electron interaction. We found in tunnel…
We propose a magnetization reversal model to explain the perpendicular switching of a single ferromagnetic layer induced by an in-plane current. Contrary to previously proposed reversal mechanisms that such magnetic switching is directly…
We probe the current-induced magnetic switching of insulating antiferromagnet/heavy metals systems, by electrical spin Hall magnetoresistance measurements and direct imaging, identifying a reversal occurring by domain wall (DW) motion. We…
We show that dipole-field induced antiferromagnetic coupling, or RKKY ferromagnetic coupling, between Co layers can strongly affect the low magnetic field switching behavior of Co/Cu/Co nanopillars. Whereas current-assisted switching at low…
We summarize our recent findings on how the current-driven magnetization switching in nanofabricated magnetic multilayers is affected by an applied magnetic field, changes of temperature, magnetic coupling between the ferromagnetic layers,…
Magnetic domain walls can be moved by spin-polarized currents due to spin-transfer torques. This opens the possibility to use them in spintronic memory devices as, e.g., in racetrack storage. Naturally, in miniaturized devices domain walls…
We theoretically investigate the switching of a perpendicular magnetic layer by in-plane charge current due to the spin Hall effect. We find that, in the high damping regime, the threshold switching current is independent of the damping…
We study current-induced deterministic magnetization switching and domain wall motion via polar Kerr microscopy in all-amorphous W$_{66}$Hf$_{34}$/CoFeB/TaO$_\text{x}$ with perpendicular magnetic anisotropy and large spin Hall angle.…
Strong, adjustable magnetic couplings are of great importance to all devices based on magnetic materials. Controlling the coupling between adjacent regions of a single magnetic layer, however, is challenging. In this work, we demonstrate…