Related papers: Coherent Spin Amplification Using a Beam Splitter

A proposal for an electron-beam device that can act as an efficient spin-polarization filter has been recently put forward [E. Karimi et al., Phys. Rev. Lett. 108, 044801 (2012)]. It is based on combining the recently developed diffraction…

Spin dependent electron transport measurements on graphene are of high importance to explore possible spintronic applications. Up to date all spin transport experiments on graphene were done in a semi-classical regime, disregarding quantum…

We reveal a large spin angular splitting of light beam on reflection at the Brewster angle both theoretically and experimentally. A simple weak measurements system manifesting itself for the built-in post-selection technique is proposed to…

We consider spin-dependent tunneling through a gallium arsenide barrier, a material which has no inversion symmetry. We are dealing with free electrons, with one effective mass and a spin-splitting in the barrier material. When we take into…

We study ballistic transport through semiconductor quantum point contact systems under different confinement geometries and applied fields. In particular, we investigate how the {\em lateral} spin-orbit coupling, introduced by asymmetric…

We explore electrically injected, spin polarized transport in a ballistic two-dimensional electron gas. We augment the Buettiker-Landauer picture with a simple, but realistic model for spin-selective contacts to describe multimode…

We show that spin polarization of electron density in nonmagnetic degenerate semiconductors can achieve 100%. This effect is realized in ferromagnet-semiconductor $FM-n^{+}$-$n$ junctions even at moderate spin selectivity of the $FM-n^{+}$…

We show theoretically that stimulated spin flip Raman scattering can be used to inject spin currents in doped semiconductors with spin split bands. A pure spin current, where oppositely oriented spins move in opposite directions, can be…

Using an ultra sensitive magneto-optical Kerr rotation setup we have observed electrical spin injection from (Zn,Mn)Se into bulk GaAs and quantified the spin injection efficiency. The current induced contribution was carefully separated…

We formulate a model of a semiconductor Quantum Dot laser with injection of spin-polarized electrons. As compared to higher-dimensionality structures, the Quantum-Dot-based active region is known to improve laser properties, including the…

The manipulation of spin degree of freedom have been demonstrated in spin polarized electron plasma in a heterostructure by using exchange-interaction induced dynamic spin splitting rather than the Rashba and Dresselhaus types, as revealed…

We show that the accumulation of spin-polarized electrons at a forward-biased Schottky tunnel barrier between Fe and n-GaAs can be detected electrically. The spin accumulation leads to an additional voltage drop across the barrier that is…

Modern electronic devices utilize charge to transmit and store information. This leaves the information susceptible to external influences, such as radiation, that can introduce short timescale charge fluctuations and, long term, degrade…

Using Fe/GaAs Schottky tunnel barriers as electrical spin detectors, we show that the magnitude and sign of their spin-detection sensitivities can be widely tuned with the voltage bias applied across the Fe/GaAs interface. Experiments and…

Structured light, optical fields engineered in their spatial, polarization, or phase degrees of freedom, has become a key resource across advanced communication, sensing, imaging, and quantum technologies. Optical fibers nowadays play an…

A scheme of spin diode is proposed that uses a step-like quantum wire with Rashba spin-orbit interaction, connected to two leads with different width. It is shown that a very large vertical spin-polarized current can be generated when…

Semiconductor holes with strong spin-orbit coupling allow all-electrical spin control, with broad applications ranging from spintronics to quantum computation. Using a two-dimensional hole system in a GaAs quantum well, we demonstrate a new…

We report on measurements of quantized conductance in gate-defined quantum point contacts in bilayer graphene that allow the observation of subband splittings due to spin-orbit coupling. The size of this splitting can be tuned from 40 to 80…

Electrical spin injection from the Heusler alloy Co_2MnGe into a p-i-n Al_0.1Ga_0.9As/GaAs light emitting diode is demonstrated. A maximum steady-state spin polarization of approximately 13% at 2 K is measured in two types of…

We propose a spin polarizer device composed of a quantum dot connected to the spin polarized leads. The spin control of the current flowing through the device is entirely due to the Coulomb interactions present inside the dot. We show that…