Related papers: Coherent Spin Amplification Using a Beam Splitter
The effect of spin polarization, induced by the difference in concentration of spin-up and spin-down electrons produced under the influence of a magnetic field, on lattice ion vibrationselectron wave interactions, and the resulting…
We show theoretically that a strongly spin-polarized current can be generated in semiconductors by taking advantage of the ferromagnetic phase of a quantum dot array (QDA). A Hubbard model with coupling to leads is used to study the…
An exact solution is derived for the wave function of an electron in a semiconductor quantum wire with spin-orbit interaction and driven by external time dependent harmonic confining potential. The formalism allows analytical expressions…
The typical bulk model describing 2D topological insulators (TI) consists of two types of spin-orbit terms, the so-called Dirac term which induces out-of plane spin polarization and the Rashba term which induces in-plane spin polarization.…
We propose and numerically simulate an optoelectronic compact circular polarimeter. It allows to electrically measure the degree of circular polarization and light intensity at room temperature for a wide range of incidence angles in a…
We apply a circularly and linearly polarized terahertz field on a monolayer of graphene taking into account spin-orbit interactions of the intrinsic and Rashba type. It turns out that the field can not only be used to induce a gap in the…
Spin polarization of the tunnel conductivity has been studied for Fe/GaAs junctions with Schottky barriers. It is shown that band matching of resonant interface states within the Schottky barrier defines the sign of spin polarization of…
Dynamical instabilities due to spin-mixing collisions in a $^{87}$Rb F=1 spinor Bose-Einstein condensate are used as an amplifier of quantum spin fluctuations. We demonstrate the spectrum of this amplifier to be tunable, in quantitative…
We report the room-temperature electroluminescence (EL) with nearly pure circular polarization (CP) from GaAs-based spin-polarized light-emitting diodes (spin-LEDs). External magnetic fields are not used during device operation. There are…
Understanding and manipulating spin polarization and transport in the vicinity of semiconductor-hosted defects is a problem of present technological and fundamental importance. Here, we use high-field magnetic resonance to monitor the…
We investigate exciton spin memory in individual InAs/GaAs self-assembled quantum dots via optical alignment and conversion of exciton polarization in a magnetic field. Quasiresonant phonon-assisted excitation is successfully employed to…
Semiconductor microcavities offer unique means of controlling light-matter interactions, which have led to the development of a wide range of applications in optical communications and inspired proposals for quantum information processing…
We demonstrate that a phase-independent quantum amplifier of a polarization qubit is a complementary amplifier of the heralded qubit amplifier [N. Gisin, S. Pironio and N. Sangouard, Phys. Rev. Lett. 105, 070501 (2010)]. It employs the…
Stimulated emission is a process during which an atomic system gives away energy to create a coherent photon. It is fundamental to the operation of the optical amplifier. Here we propose two mechanisms for amplifying AC spin currents in a…
Lasers with injected spin-polarized carriers show an outstanding performance in both static and dynamic operation. In addition to the intensity response of conventional lasers, without spin-polarized carriers, both intensity and…
We use subpicosecond laser pulses to generate and monitor in real time collective oscillations of electrons in a modulation-doped GaAs quantum well. The observed frequencies match those of intersubband spin- and charge-density excitations.…
The fourfold spin-valley degenerate degrees of freedom in bulk graphene can support rich physics and novel applications associated with multicomponent quantum Hall effects and linear conductance filtering. In this work, we study how to…
The generation of an out-of-equilibrium population of spin-polarized carriers is a keystone process for quantum technologies and spintronics alike. It can be achieved through the so-called optical spin orientation by exciting the material…
Recent experimental breakthroughs have demonstrated that the electron spin in silicon can be reliably injected and detected as well as transferred over distances exceeding 1 mm. We propose an on-chip communication paradigm which is based on…
We advance spin noise spectroscopy to an ultrafast tool to resolve high frequency spin dynamics in semiconductors. The optical non-demolition experiment reveals the genuine origin of the inhomogeneous spin dephasing in n-doped GaAs wafers…