We show theoretically that stimulated spin flip Raman scattering can be used to inject spin currents in doped semiconductors with spin split bands. A pure spin current, where oppositely oriented spins move in opposite directions, can be injected in zincblende crystals and structures. The calculated spin current should be detectable by pump-probe optical spectroscopy and anomalous Hall effect measurement.
@article{arxiv.cond-mat/0508230,
title = {Generation of spin currents via Raman scattering},
author = {Ali Najmaie and E. Ya. Sherman and J. E. Sipe},
journal= {arXiv preprint arXiv:cond-mat/0508230},
year = {2009}
}