Related papers: Two-Parameter Quasi-Ballistic Transport Model for …
To study the ballistic transport of charge carriers in nano-structured quantum devices, a highly efficient numerical technique is developed, which provides continuous transmission spectra for arbitrarily complex potential geometries in two…
We present a detailed microscopic study of quasi-ballistic transport in deep submicron semiconductor channels. In particular, we study the crossover between the diffusive and ballistic regimes of transport and identify signatures in the…
In this work we propose a channel backscattering model in which increased carrier temperature at the top of the potential energy barrier in the channel is taken into account. This model represents an extension of a previous model by the…
A two-fluid model is proposed to describe the transport properties of granular superconductors. Using the resistively shunted junction model and some aspects of the two-level system theory, a statistical model is developed which takes into…
Nanoelectronics requires the development of a priori technology evaluation for materials and device design that takes into account quantum physical effects and the explicit chemical nature at the atomic scale. Here, we present a…
We report the transport characteristics of both electrons and holes through narrow constricted crystalline Si "wall-like" long-channels that were surrounded by a thermally grown SiO2 layer. Importantly, as a result of the existence of fixed…
Charge transport in disordered two-dimensional (2D) systems showcases a myriad of unique phenomenologies that highlight different aspects of the underlying quantum dynamics. Electrons in such systems undergo a crossover from ballistic…
We consider conductance mapping of systems based on the two-dimensional electron gas with scanning gate microscopy using two and more tips of the atomic force microscope. The paper contains results of numerical simulations for a model tip…
A 20 band sp3d5s* spin-orbit-coupled, semi-empirical, atomistic tight-binding (TB) model is used with a semi-classical, ballistic, field-effect-transistor (FET) model, to theoretically examine the bandstructure carrier velocity and…
We present a new semi-empirical model for calculating electron transport in atomic-scale devices. The model is an extension of the Extended H\"uckel method with a self-consistent Hartree potential. This potential models the effect of an…
In this work, a new theoretical approach to study the non-equilibrium transport properties of nanoscale systems coupled to metallic electrodes with strong electron-phonon interactions is presented. The proposed approach consists in a…
Nonequilibrium transport measurements in mesoscopic quasi-ballistic 2D electron systems show an enhancement in the differential conductance around the Fermi energy. At very low temperatures, such a zero-bias anomaly splits, leading to a…
A theoretical approach for the non-equilibrium transport properties of nanoscale systems coupled to metallic electrodes with strong electron-phonon interactions is presented. It consists in a resummation of the dominant Feynman diagrams…
Although the two-dimensional model of random networks of metallic nanowires or carbon nanotubes is widely used, it significantly overestimates the number of contacts between elements compared to quasi-three-dimensional models. This, within…
We study one-dimensional transport in focused-ion-beam written in-plane-gate transistors on III-V heterostructures at moderately low temperatures at zero bias without any external magnetic field applied. In accordance with a recent proposal…
There has been a recent surge of interest in understanding charge transport at atomic scales. The motivations are myriad, including understanding the conductance properties of peptides measured experimentally. In this study, we propose a…
The transport properties of micrometer scale structures fabricated from high-mobility HgTe quantum-wells have been investigated. A special photoresist and Ti masks were used, which allow for the fabrication of devices with characteristic…
Nanoscale electronic transport is of intense technological interest, with applications ranging from semiconducting devices and molecular junctions to charge migration in biological systems. Most explicit theoretical approaches treat…
As a result of suppressed phonon conduction, large improvements of the thermoelectric figure of merit, ZT, have been recently reported for nanostructures compared to the raw materials' ZT values. It has also been suggested that low…
Electron transport in a self-consistent potential along a ballistic two-terminal conductor has been investigated. We have derived general formulas which describe the nonlinear current-voltage characteristics, differential conductance, and…