Electronic transport through molecular transistors in the polaronic regime
Abstract
In this work, a new theoretical approach to study the non-equilibrium transport properties of nanoscale systems coupled to metallic electrodes with strong electron-phonon interactions is presented. The proposed approach consists in a resummation of the dominant Feynman diagrams from the exact preturbative expansion. This scheme is compared with methods that can be found in the literature. It shows a good agreement with these methods in the range where they are known to provide good results, for a wide range of parameters. Also, it is compared with path-integral Monte Carlo calculations giving a relatively good agreement for polaronic and non polaronic regimes. Some preliminary results for the current noise obtained with our method are presented.
Keywords
Cite
@article{arxiv.1307.8008,
title = {Electronic transport through molecular transistors in the polaronic regime},
author = {R. Seoane Souto and A. Levy Yeyati and A. Martín-Rodero and R. C. Monreal},
journal= {arXiv preprint arXiv:1307.8008},
year = {2013}
}
Comments
24 pages and 14 figures. Master thesis presented at Universidad Aut\'onoma de Madrid on 27 May 2013