Related papers: Diffuson contribution to anomalous Hall effect in …
We report a detailed magnetic and structural analysis of highly reduced Co doped rutile TiO2 films displaying an anomalous Hall effect (AHE). The temperature and field dependence of magnetization, and transmission electron microscopy…
Time-reversal symmetry breaking is the basic physics concept underpinning many magnetic topological phenomena such as the anomalous Hall effect (AHE) and its quantized variant. The AHE has been primarily accompanied by a ferromagnetic…
We have investigated the thermoelectric and thermal behaviour of Fe-V-W-Al based thin films prepared using radio frequency magnetron sputtering technique at different base pressures (0.1 ~ 1.0 X 10-2 Pa) and on different substrates (n, p…
Weakly disordered superconducting films can be driven into an anomalous low temperature resistive state upon applying a magnetic field. Recent experiments on weakly disordered amorphous InO$_x$ have established that both the Hall…
The anomalous Hall coefficient Rs has been studied for the reentrant spin glass system Fe0.7Al0.3 by measuring the magnetization M and the Hall resistivity r_H. We have found that R_s exhibits anomalous temperature dependence at the…
The microstructure and electrical transport of Cr$_x$(SiO$_2$)$_{1-x}$ nanogranular films with Cr volume faction $x$$\simeq$0.67 and 0.72 are systematically investigated. The transmission electron microscopy images and elemental mappings…
Thin films of Co2MnSi have been grown on a-plane sapphire substrates from three elemental targets by dc magnetron co-sputtering. These films are single phase, have a strong (110) texture and a saturation magnetization of 4.95 uB/formula…
We report the temperature dependence of resistivity (rho) and Hall coefficient (R_H) in the normal state of homogeneously disordered epitaxial NbN thin films with kFl~3.27-10.12. The superconducting transition temperature (Tc) of these…
We report on Cr doping effect in Mn3Sn polycrystalline films with both uniform and modulation doping. It is found that Cr doping with low concentration does not cause notable changes to the structural and magnetic properties of Mn3Sn, but…
We report the observation of anomalous Hall resistivity in single crystals of EuAl$_4$, a centrosymmetric tetragonal compound, which exhibits coexisting antiferromagnetic (AFM) and charge-density-wave (CDW) orders with onset at…
We report on low-temperature electron transport properties of MnSb2Te4, a candidate of ferrimagnetic Weyl semimetal. Long -range magnetic order is manifested as a nearly square-shaped hysteresis loop in the anomalous Hall resistance, as…
In most conductors current flow perpendicular to electric field direction (Hall current) can be explained in terms of the Lorentz forces present when charged particles flow in an external magnetic field. However, as established in the very…
The quantum anomalous Hall effect (QAHE) realizes dissipationless longitudinal resistivity and quantized Hall resistance without the need of an external magnetic field. However, when reducing the device dimensions or increasing the current…
Bismuth chalcogenides are the most studied 3D topological insulators. As a rule, at low temperatures thin films of these materials demonstrate positive magnetoresistance due to weak antilocalization. Weak antilocalization should lead to…
We report the successful growth of highly textured thin films of (Fe,Ni)5GeTe2 two-dimensional ferromagnet on c-plane sapphire using pulsed laser deposition. Structural characterization via X-ray diffraction confirms preferential…
Magnetoresistivity and Hall effect measured in magnetic fields up to B=9T (B||c, J||ab) in electron-doped $Nd_{2-x}$Ce_{x}Cu$O_{4+{\delta}} single crystal films with x = 0.14; 0.15; 0.18 and different oxygen content ({\delta}) were studied…
The temperature dependence of the Hall coefficient of a series of ferromagnetic Ga(1-x)Mn(x)As samples is measured in the temperature range 80K < T < 500K. We model the Hall coefficient assuming a magnetic susceptibility given by the…
A detailed understanding of the different mechanisms being responsible for terahertz (THz) emission in ferromagnetic (FM) materials will aid in designing efficient THz emitters. In this report, we present direct evidence of THz emission…
The electrical Hall effect can be significantly enhanced through the interplay of the conduction electrons with magnetism, which is known as the anomalous Hall effect (AHE). Whereas the mechanism related to band topology has been…
The interplay of magnetism and topology opens up the possibility for exotic linear response effects, such as the anomalous Hall effect and the anomalous Nernst effect, which can be strongly enhanced by designing a strong Berry curvature in…