Related papers: Diffuson contribution to anomalous Hall effect in …
Disorder in any form is considered to be highly detrimental to the experimental exploration of novel phenomena in quantum materials with non-trivial band topology. Contrary to established belief, clear topological features are reliably…
The anomalous Hall effect is investigated for ferromagnetic Fe3Sn2 single crystal with geometrically frustrated kagome bilayer of Fe. The scaling behavior between anomalous Hall resistivity rho_{xy}^{A} and longitudinal resistivity rho_{xx}…
Magnetite epitaxial thin films have been prepared by pulsed laser deposition at 340 C on MgO and Si substrates. One key result is that the thin film properties are almost identical to the properties of bulk material. For 40 - 50 nm thick…
The nonlinear behavior of the Hall resistivity at low magnetic fields in single quantum well GaAs/In$_x$Ga$_{1-x}$As/GaAs heterostructures with degenerated electron gas is studied. It has been found that this anomaly is accompanied by the…
Motivated by the recently observed unconventional Hall effect in ultra-thin films of ferromagnetic SrRuO$_3$ (SRO) we investigate the effect of strain-induced oxygen octahedral distortion in the electronic structure and anomalous Hall…
The Hall effect, in which current flows perpendicular to an applied electrical bias, has played a prominent role in modern condensed matter physics over much of the subject's history. Appearing variously in classical, relativistic and…
In the $R$Al(Si,Ge) ($R$: lanthanides) family, both spatial inversion and time-reversal symmetries are broken. This may offer opportunities to study Weyl-fermion physics in nontrivial spin structures emerging from a noncentrosymmetric…
We systematically investigated the temperature behaviors of the electrical conductivity and Hall coefficient of two series of amorphous indium gallium zinc oxides (a-IGZO) films prepared by rf sputtering method. The two series of films are…
Ferroelectricity, anti-ferromagnetism (AFM) and quantum anomalous Hall effect (QAHE) are three fundamental phenomena in the field of condensed matter physics, which could enable the realization of novel devices and thus attracts great…
An anomalous Hall effect (AHE) in antiferromagnetic (AF) systems with no net magnetization is of considerable interest for both fundamental physics and spintronic applications. Of particular interest is the two-dimensional van der Waals…
We report resistivity, Hall coefficient, current-voltage characteristics, and magneto-optical imaging measurements of epitaxial Co-doped BaFe_{2}As_{2} thin films deposited on MgO(001) substrate. The Hall resistivity of the films has a…
Noncollinear antiferromagnets with a D0$_{19}$ (space group = 194, P6$_{3}$/mmc) hexagonal structure have garnered much attention for their potential applications in topological spintronics. Here, we report the deposition of continuous…
The properties of alloys that undergo to chemical order-disorder transformations depend heavily on the degree of ordering in the crystal lattice. In the literature, it is well established that the ordering in a magnetic alloy such as…
In the study of the anomalous Hall effect, the scaling relations between the anomalous Hall and longitudinal resistivities play the central role. The scaling parameters by definition are fixed as the scaling variable (longitudinal…
A coherent description of the anomalous Hall effect (AHE) is presented that is applicable to pure as well as disordered alloy systems by treating all sources of the AHE on equal footing. This is achieved by an implementation of the…
Large intrinsic anomalous Hall effect (AHE) originating in the Berry curvature has attracted growing attention for potential applications. Recently proposed magnetic Weyl semimetal EuCd$_2$Sb$_{\mathrm{2}}$ provides an excellent platform…
The quantum anomalous Hall (QAH) effect is a novel topological spintronic phenomenon arising from inherent magnetization and spin-orbit coupling. Various theoretical and experimental efforts have been devoted in search of robust intrinsic…
Ferrimagnetic Mn$_4$N is a promising material for heat flux sensors based on the anomalous Nernst effect (ANE) because of its sizable uniaxial magnetic anisotropy ($K_{\rm u}$) and low saturation magnetization ($M_{\rm s}$). We…
We report a strong size dependence of coercivity in amorphous ferrimagnetic TbFeCo films. The as-deposited film exhibited a low saturation magnetization (Ms=100 emu/cc) and a high perpendicular anisotropy (Ku=10^6 erg/cc). Hall-bar devices…
We report on measurements of the resistivity and Hall coefficient in underdoped GdBa2Cu3O7-d epitaxial thin films grown by off-axis magnetron sputtering. The films have been lithographically patterned allowing precise measurements of the…