Temperature dependence of resistivity and Hall-coefficient in a strongly disordered metal: NbN

Madhavi Chand; Archana Mishra; Y. M. Xiong; Anand Kamlapure; S. P. Chockalingam; John Jesudasan; Vivas Bagwe; Mintu Mondal; P. W. Adams; Vikram Tripathi; Pratap Raychaudhuri

doi:10.1103/PhysRevB.80.134514

Temperature dependence of resistivity and Hall-coefficient in a strongly disordered metal: NbN

Disordered Systems and Neural Networks 2009-10-23 v1 Strongly Correlated Electrons Superconductivity

Authors: Madhavi Chand , Archana Mishra , Y. M. Xiong , Anand Kamlapure , S. P. Chockalingam , John Jesudasan , Vivas Bagwe , Mintu Mondal , P. W. Adams , Vikram Tripathi , Pratap Raychaudhuri

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Abstract

We report the temperature dependence of resistivity (rho) and Hall coefficient (R_H) in the normal state of homogeneously disordered epitaxial NbN thin films with kFl~3.27-10.12. The superconducting transition temperature (Tc) of these films varies from 8.13K to 16.8K. While our least disordered film displays usual metallic behavior, for all the films with kFl<8.13, both and are negative up to 300K. We observe that R_H(T) varies linearly with rho(T) for all the films. Measurements performed on a 2nm thick Be film shows similar behavior >. This behavior is inconsistent with existing theories of localization and e-e interactions in a disordered metal.

Keywords

strongly disordered metal NbN thin films resistivity Hall coefficient temperature dependence localization electron-electron interactions

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@article{arxiv.0907.4735,
  title  = {Temperature dependence of resistivity and Hall-coefficient in a strongly disordered metal: NbN},
  author = {Madhavi Chand and Archana Mishra and Y. M. Xiong and Anand Kamlapure and S. P. Chockalingam and John Jesudasan and Vivas Bagwe and Mintu Mondal and P. W. Adams and Vikram Tripathi and Pratap Raychaudhuri},
  journal= {arXiv preprint arXiv:0907.4735},
  year   = {2009}
}

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Temperature dependence of resistivity and Hall-coefficient in a strongly disordered metal: NbN

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