Related papers: Electrical valley filtering in transition metal di…
Twisted bilayer graphene (TBG) aligned with hexagonal boron nitride (h-BN) substrate can exhibit an anomalous Hall effect at 3/4 filling due to the spontaneous valley polarization in valley resolved moir\'e bands with opposite Chern number…
The assisted tunneling of a wave packet between square one dimensional barriers is treated analytically. The tunneling rate is calculated exactly for a potential mimicking a constant electric field with arbitrary time dependence. The pole…
We develop a theory of Coulomb interaction-related contribution to the photogalvanic current of the carriers of charge in two-dimensional non-centrosymmetric Dirac materials possessing a nontrivial structure of valleys and exposed to an…
We study resonant tunnelling through double-barrier structures under an applied bias voltage, in which nonlinearities due to self-interaction of electrons in the barrier regions are included. As an approximation, we concern ourselves with…
We consider theoretically staggered honeycomb lattices for photons which can be viewed as photonic analogs of transitional metal dichalcogenides (TMD) monolayers. We propose a simple realization of a photonic Quantum Valley Hall effect…
Developing alternative paradigms of electronics beyond silicon technology requires the exploration of fundamentally new physical mechanisms, such as the valley specific phenomena in hexagonal two-dimensional materials. We realize ballistic…
A tunneling transistor without heterojunction as a theoretical design, or more precisely controlled electron current transmission by barrier potential, is under consideration. The electrons from the conduction band of the source tunnel…
We study the electron transmission through the domain boundary on bilayer graphene separating AB and BA stacking regions. Using the effective continuum model, we calculate the electron transmission probability as a function of the electron…
The relativistic nature of charge carriers in graphene is expected to lead to an angle- dependent transmission through a potential barrier, where Klein tunneling involves annihilation of an electron and a hole at the edges of the barrier.…
The influence of a rectangular potential barrier on the quantum transport of fermions in silicene is explored. Specifically, analytical solutions are presented to derive transmission and reflection probabilities together with conductance.…
We study the effect of the strain on the band structure and the valley-dependent transport property of graphene heterojunctions. It is found that valley-dependent separation of electrons can be achieved by utilizing the strain and on-site…
Stable and switchable polarization of ferroelectric materials opens a possibility to electrically control their functional behavior. A particularly promising approach is to employ ferroelectric tunnel junctions where the polarization…
We propose a device in which a sheet of graphene is coupled to a Weyl semimetal, allowing for the physical access to the study of tunneling from two-dimensional to three dimensional massless Dirac fermions. Due to the reconstructed band…
In solid, the crystalline structure can endow electron an internal degree of freedom known as valley, which characterizes the degenerate energy minima in momentum space. The recent success in optical pumping of valley polarization in 2D…
Valleytronics is one of the breaking-through to the technology of electronics, which provides a new degree of freedom to manipulate the properties of electrons. Combining DFT calculations, optical absorption analysis and the linear…
Although single-layer transition-metal dichalcogenides with novel valley functionalities are promising candidate to realize valleytronic devices, the essential understanding of valley depolarization mechanisms is still incomplete. Based on…
One of the main tasks in the investigation of 2-dimensional transition metal dichalcogenides is the determination of valley lifetimes. In this work, we combine time-resolved Kerr rotation with electrical transport measurements to explore…
In monolayers of transition metal dichalcogenides the nonlocal nature of the effective dielectric screening leads to large binding energies of excitons. Additional lateral confinement gives rise to exciton localization in quantum dots. By…
2D materials with broken inversion symmetry posses an extra degree of freedom, the valley pseudospin, that labels in which of the two energy-degenerate crystal momenta, K or K', the conducting carriers are located. It has been shown that…
Based on the general form of the master equation for open quantum systems the tunneling is considered. Using the path integral technique a simple closed form expression for the tunneling rate through a parabolic barrier is obtained. The…