Related papers: Electrical valley filtering in transition metal di…
The energy spectra of transition metal dichalcogenides are primarily influenced by the and orbitals. This results in a three-band model characterized by strong spin-orbit interaction. Investigating these bands using a projection into a…
Propagation of an electron wave packet through a quantum point contact (QPC) defined by electrostatic gates in bilayer graphene is investigated. The gates provide a bias between the layers, in order to produce an energy gap. If the gates on…
Valleytronics is rapidly emerging as an exciting area of basic and applied research. In two dimensional systems, valley polarisation can dramatically modify physical properties through electron-electron interactions as demonstrated by such…
We study the valley-dependent magnetic and transport properties of massive Dirac fermions in multivalley systems such as the transition metal dichalcogenides. The asymmetry of the zeroth Landau level between valleys and the enhanced…
Lateral-hetero structures of atomic layered materials alter the electronic properties of pristine crystals and provide a possibility to produce useful monolayer materials. We reveal that metal-semiconductor-metal lateral-hetero junctions of…
A valley filter capable of generating a valley-polarized current is a crucial element in valleytronics, yet its implementation remains challenging. Here, we propose a valley filter made of a graphene bilayer which exhibits a 1D moir\'{e}…
We study transport in twisted bilayer graphene and show that electrostatic barriers can act as valley splitters, where electrons from the $K$ ($K'$) valley are transmitted only to e.g.\ the top (bottom) layer, leading to valley-layer locked…
We investigate the electronic transport property of lateral heterojunctions of semiconducting and metallic transition-metal dichalcogenide monolayers, MoSe$_2$ and NbSe$_2$, respectively. We calculate the electronic transmission probability…
Graphene electrons feature a pair of massless Dirac cones of opposite pseudospin chirality at two valleys. Klein tunneling refers to the intriguing capability of these chiral electrons to penetrate through high and wide potential barrier.…
Memory or transistor devices based on electron's spin rather than its charge degree of freedom offer certain distinct advantages and comprise a cornerstone of spintronics. Recent years have witnessed the emergence of a new field,…
Here we theoretically investigate the valley-dependent transmission of particles through a combined electric and magnetic barrier in the $\alpha-T_3$ model which interpolates between the honeycomb and the dice lattices. We put forward that…
Monolayer transition metal dichalcogenides have attracted great attentions for potential applications in valleytronics. However, the valley polarization degree is usually not high because of the intervalley scattering. Here, we demonstrate…
The Valley Hall effect provides a popular route to engineer robust waveguides for bosonic excitations such a photons and phonons. The almost complete absence of backscattering in many experiments has its theoretical underpinning in a…
We investigate tunneling decay in a magnetic field. Because of broken time-reversal symmetry, the standard WKB technique does not apply. The decay rate and the outcoming wave packet are found from the analysis of the set of the particle…
In transition metal dichalcogenides, the valley degree of freedom directly couples valley-polarised excitons - excited by circularly polarised light - to valley-dependent chiral photons, enabling ultrafast light-driven valleytronics.…
In this paper we study the tunneling using a background independent (polymer) quantization scheme. We show that at low energies, for the tunneling through a single potential barrier, the polymer transmission coefficient and the polymer…
Charge carriers in Dirac/Weyl semimetals with tilted anisotropic energy dispersion exhibit valley-dependent refraction and reflection at electrostatic barrier interfaces. Here, we show that an angled barrier interface provides a purely…
We present measurements of the rates for an electron to tunnel on and off a quantum dot, obtained using a quantum point contact charge sensor. The tunnel rates show exponential dependence on drain-source bias and plunger gate voltages. The…
We recently shown, using tight-binding calculations, that nonequilibrium valley polarization can be realized in graphene, when the current is injected through "valley filter": a ballistic point contact with zigzag edges. Here we…
In monolayer transition metal dichalcogenides time-reversal symmetry, combined with space-inversion symmetry, defines the spin-valley degree of freedom. As such, engineering and control of time-reversal symmetry by optical or magnetic…