Related papers: Electrical valley filtering in transition metal di…
While the exponential decay of tunneling probability with barrier thickness is well known, the accompanying oscillations with thickness have been comparatively less explored. Using a tight binding model, we investigate an AB-stacked bilayer…
The spin-polarized transport is investigated in a new type of magnetic tunnel junction which consists of two ferromagnetic electrodes separated by a magnetic barrier and a nonmagnetic metallic spacer. Based on the transfer matrix method and…
In this paper we look at transmission through one-dimensional potential barriers that are piece wise constant. The Transfer Matrix approach is adopted and a new formula is derived for multiplying long matrix sequences that not only leads to…
The transfer Hamiltonian tunneling current is derived in a time-dependent density matrix formulation and is used to examine photon-assisted tunneling. Bardeen's tunneling expression arises as the result of first order perturbation theory in…
A theoretical technique which allows to include contributions from non-orthogonality of the electron states in the leads connected to a tunneling junction is derived. The theory is applied to a single barrier tunneling structure and a…
In single-layer WSe$_2$, a paradigmatic semiconducting transition metal dichalcogenide, a circularly polarized laser field can selectively excite electronic transitions in one of the inequivalent $K^{\pm}$ valleys. Such selective valley…
We develop a theory of Coulomb interaction-mediated contribution to valley Hall effect (VHE) in two-dimensional non-centrosymmetric gapped Dirac materials. We assume that the bare valley Hall current occurs in the system due to the presence…
Chiral light-matter interactions can enable polarization to control the direction of light emission in a photonic device. Most realizations of chiral light-matter interactions require external magnetic fields to break time-reversal symmetry…
We analyze the problem of electronic transmission through different regions of a graphene sheet that are characterized by different types of connections between the Dirac points. These valley symmetry breaking Hamiltonians might arise from…
A large set of recent experiments has been exploring topological transport in bosonic systems, e.g. of photons or phonons. In the vast majority, time-reversal symmetry is preserved, and band structures are engineered by a suitable choice of…
We show that excitons and free carriers in K and K' valleys of transition metal dichalcogenide monolayers can be entangled with respect to their valley degree of freedom by absorbing linearly polarized single photons. This effect does not…
The influence of depolarizing field on the magnitude and stability of a uniform polarization in ferroelectric capacitors and tunnel junctions is studied using a nonlinear thermodynamic theory. It is predicted that, in heterostructures…
In all theoretical treatments of electron transport through single molecules between two metal electrodes, a clear distinction has to be made between a coherent transport regime with a strong coupling throughout the junction and a Coulomb…
The direct gap interband transitions in transition metal dichalcogenides monolayers are governed by chiral optical selection rules. Determined by laser helicity, optical transitions in either the $K^+$ or $K^-$ valley in momentum space are…
Theoretical predictions are made for the current-voltage characteristics of two-dimensional heterojunction interlayer tunneling field-effect transistors (Thin-TFETs), focusing on the magnitude of the current that is achievable in such…
We study the spin dependent tunneling of electrons through a zinc-blende semiconductor with the indirect X (or D) minimum serving as the tunneling barrier. The basic difference between tunneling through the G vs. the X barrier is the…
Valleytronics rooted in the valley degree of freedom is of both theoretical and technological importance as it offers additional opportunities for information storage and electronic, magnetic and optical switches. In analogy to…
We investigate theoretically the simultaneous tunneling of two electrons from a superconductor into a normal metal at low temperatures and voltages. Such an emission process is shown to be equivalent to the Andreev reflection of an incident…
A theory of the valley and spin Hall effects and resulting accumulation of the valley and spin polarization is developed for ultraclean channels made of two-dimensional semiconductors where the electron mean free path due to the residual…
The quantum geometric properties of Bloch electrons fundamentally govern light-matter interactions and optical selection rules in solids. In semiconducting transition-metal dichalcogenides, circularly polarized excitation near the band edge…