Related papers: Spin lifetime and charge noise in hot silicon quan…
We investigate the electron and hole spin relaxation in an ensemble of self-assembled InAs/In$_{0.53}$Al$_{0.24}$Ga$_{0.23}$As/InP quantum dots with emission wavelengths around $1.5$~$\mu$m by pump-probe Faraday rotation spectroscopy.…
We report local time-resolved thermometry in a silicon nanowire quantum dot device designed to host a linear array of spin qubits. Using two alternative measurement schemes based on rf reflectometry, we are able to probe either local…
The negatively charged boron vacancy in two-dimensional hexagonal boron nitride has emerged as a promising candidate for quantum sensing. The coherence time of this defect spins which coherent quantum sensing resides in is limited…
We theoretically consider coherence times for spins in two quantum computer architectures, where the qubit is the spin of an electron bound to a P donor impurity in Si or within a GaAs quantum dot. We show that low temperature decoherence…
We report on measurements of the spin lifetime of nuclear spins strongly coupled to a micromechanical cantilever as used in magnetic resonance force microscopy. We find that the rotating-frame correlation time of the statistical nuclear…
We measure and analyze noise-induced energy-fluctuations of spin qubits defined in quantum dots made of isotopically natural silicon. Combining Ramsey, time-correlation of single-shot measurements, and CPMG experiments, we cover the qubit…
We calculate the lifetime of conduction band excited states in self-assembled quantum dots by taking into account LO-phonon-electron interaction and various anharmonic phonon couplings. We show that polaron relaxation cannot be accurately…
Coherent electron spin dynamics in 10-nm-wide InGaAs/InAlAs quantum wells is studied from 10 K to room temperature using time-resolved Kerr rotation. The spin lifetime exceeds 1 ns at 10 K and decreases with temperature. By varying the…
In the "flopping-mode" regime of electron spin resonance, a single electron confined in a double quantum dot is electrically driven in the presence of a magnetic field gradient. The increased dipole moment of the charge in the flopping mode…
Solid-state qubit manipulation and read-out fidelities are reaching fault-tolerance, but quantum error correction requires millions of physical qubits and thus a scalable quantum computer architecture. To solve signal-line bandwidth and…
Characterizing charge noise is of prime importance to the semiconductor spin qubit community. We analyze the echo amplitude data from a recent experiment [Yoneda et al., Nat. Nanotechnol. 13, 102 (2018)] and note that the data shows small…
Exciton spin relaxation is investigated in single epitaxially grown semiconductor quantum dots in order to test the expected spin relaxation quenching in this system. We study the polarization anisotropy of the photoluminescence signal…
We present a method for reading out the spin state of electrons in a quantum dot that is robust against charge noise and can be used even when the electron temperature exceeds the energy splitting between the states. The spin states are…
Long-range quantum communication for spin qubits is an important open problem. Here we study decoherence of an electron spin qubit that is being transported in a moving quantum dot. We focus on spin decoherence due to spin-orbit interaction…
A semiclassical Monte Carlo approach is adopted to study the multivalley spin depolarization of drifting electrons in a doped n-type GaAs bulk semiconductor, in a wide range of lattice temperature ($40<T_L<300$ K) and doping density…
The carrier spin dynamics in a n-doped (In,Ga)As/GaAs quantum well has been studied by time-resolved Faraday rotation and ellipticity techniques in the temperature range down to 430 milliKelvin. These techniques give data with very…
We present an ab initio calculation of the k and spin-resolved electronic lifetimes in the half-metallic Heusler compounds Co(2)MnSi and Co(2)FeSi. We determine the spin-flip and spin-conserving contributions to the lifetimes and study in…
A realistic pseudopotential model is introduced to investigate the phonon-induced spin relaxation of conduction electrons in bulk silicon. We find a surprisingly subtle interference of the Elliott and Yafet processes affecting the spin…
Er$^{3+}$$:$Y$_2$SiO$_5$ is a material of particular interest due to its suitability for telecom-band quantum memories and quantum transducers interfacing optical communication with quantum computers working in the microwave regime.…
A long spin-lifetime of electrons is the holy grail of spintronics, a field exploiting the electron angular momentum as information carrier and storage unit. Previous reports indicated a spin lifetime, $\tau_{\text{s}}$ near $10$ ns at best…