Related papers: Spin lifetime and charge noise in hot silicon quan…
The strong atomistic spin orbit coupling of holes makes single-shot spin readout measurements difficult because it reduces the spin lifetimes. By integrating the charge sensor into a high bandwidth radio-frequency reflectometry setup we…
The decay time of the linear polarization degree of the luminescence in strongly confined semiconductor quantum dots with asymmetrical shape is calculated in the frame of second-order quasielastic interaction between quantum dot charge…
Silicon quantum dot qubits show great promise but suffer from charge noise with a 1/f^\alpha spectrum, where f is frequency and \alpha \lesssim 1. It has recently been proposed that 1/f^\alpha noise spectra can emerge from a few thermally…
Controlling electron spins in double quantum dots allows individual electrons to be trapped and manipulated for next-generation solid-state qubit devices. In this paper, the study analyzes spin relaxation due to deformation potentials of…
Silicon spin qubits are among the most promising candidates for large scale quantum computers, due to their excellent coherence and compatibility with CMOS technology for upscaling. Advanced industrial CMOS process flows allow wafer-scale…
We derive the spontaneous and thermal spin-flip rates for a neutral two-level ultra-cold atom that is coupled to a magnetic field. We apply this theory to an atom in the vicinity of a 2-layer cylindrical absorbing dielectric body surrounded…
We study the lifetime of the persistent spin helix in semiconductor quantum wells with equal Rashba- and linear Dresselhaus spin-orbit interactions. In order to address the temperature dependence of the relevant spin relaxation mechanisms…
The relaxation time of a single-electron spin is an important parameter for solid-state spin qubits, as it directly limits the lifetime of the encoded information. Thanks to the low spin-orbit interaction and low hyperfine coupling,…
The time-window for processing electron spin information (spintronics) in solid-state quantum electronic devices is determined by the spin-lattice (T1) and spin-spin (T2) relaxation times of electrons. Minimising the effects of spin-orbit…
A hybrid ferromagnet/semiconductor device is used to determine a lower bound on the spin lifetime for conduction electrons in silicon. We use spin precession to self-consistently measure the drift velocity vs. drift field of spin-polarized…
Silicon spin qubits are promising candidates for realising large scale quantum processors, benefitting from a magnetically quiet host material and the prospects of leveraging the mature silicon device fabrication industry. We report the…
Quantum memories capable of storing and retrieving coherent information for extended times at room temperature would enable a host of new technologies. Electron and nuclear spin qubits using shallow neutral donors in semiconductors have…
We directly measure the hole spin lifetime in ferromagnetic GaMnAs via time- and polarization-resolved spectroscopy. Below the Curie temperature Tc, an ultrafast photoexcitation with linearly-polarized light is shown to create a…
The nature of the nano-scale environment presents a major challenge for solid-state implementation of spin-based qubits. In this work, a single electron spin in an optically pumped nanometer-sized III-V semiconductor quantum dot is used to…
The remarkable properties of silicon have made it the central material for the fabrication of current microelectronic devices. Silicon's fundamental properties also make it an attractive option for the development of devices for spintronics…
We measure the relaxation rate $W \equiv T_{1}^{-1}$ of a single electron spin in a quantum dot at magnetic fields from 7 T down to 1.75 T, much lower than previously measured. At 1.75 T we find that $T_{1}$ is 170 ms. We find good…
Understanding spin relaxation in topological systems such as quantum spin-hall (QSH) insulator is critical for realizing coherent transport at high temperature. WTe$_{2}$, known as a QSH insulator with a high transition temperature of 100K,…
Recent advances towards spin-based quantum computation have been primarily fuelled by elaborate isolation from noise sources, such as surrounding nuclear spins and spin-electric susceptibility, to extend spin coherence. In the meanwhile,…
We investigate hole spin relaxation in the single- and multi-hole regime in a 2x2 germanium quantum dot array. We use radiofrequency (rf) charge sensing and observe Pauli Spin-Blockade (PSB) for every second interdot transition up to the…
We report on measurements of the spin relaxation time T1 of individual electron spins in the few electron regime of a Si/SiO2-based quantum dot (QD). Energy-spectroscopy of the QD has been performed using a charge sensing technique. The…