Related papers: Template-assisted scalable nanowire networks
Topological quantum computing is based on braiding of Majorana zero modes encoding topological qubits. A promising candidate platform for Majorana zero modes is semiconductor-superconductor hybrid nanowires. The realization of topological…
Strong spin-orbit semiconductor nanowires coupled to a superconductor are predicted to host Majorana zero modes. Exchange (braiding) operations of Majorana modes form the logical gates of a topological quantum computer and require a network…
Semiconductor nanowires have been playing a crucial role in the development of nanoscale devices for the realization of spin qubits, Majorana fermions, single photon emitters, nanoprocessors, etc. The monolithic growth of site-controlled…
Semiconductor-superconductor hybrids are commonly used in research on topological quantum computation. Traditionally, top-down approaches involving dry or wet etching are used to define the device geometry. These often aggressive processes…
Quantum dots tuned to atomic resonances represent an emerging field of hybrid quantum systems where the advantages of quantum dots and natural atoms can be combined. Embedding quantum dots in nanowires boosts these systems with a set of…
Ultrathin InAs nanowires (NW) with one-dimensional (1D) sub-band structure are promising materials for advanced quantum-electronic devices, where dimensions in the sub-30 nm diameter limit together with post-CMOS integration scenarios on Si…
III-V semiconductor nanowires have shown great potential in various quantum transport experiments. However, realizing a scalable high-quality nanowire-based platform that could lead to quantum information applications has been challenging.…
We report a novel growth mechanism that produces in-plane [1-10] oriented ErSb nanowires formed during codeposition of Er0.3Ga0.7Sb via molecular beam epitaxy (MBE). Nanowires are characterized by in-situ scanning tunneling microscopy…
Germanium nanostructures offer significant potential in developing advanced integrated circuit and disruptive quantum technologies, yet achieving both scalability and high carrier mobility remains a challenge in materials science. Here, we…
Superconductors hosting long-sought excitations called Majorana fermions may be ultimately used as qubits of fault-tolerant topological quantum computers. A crucial challenge toward the topological quantum computer is to implement quantum…
The boundary of topological superconductors might lead to the appearance of Majorana edge modes, whose non-trivial exchange statistics can be used for topological quantum computing. In branched nanowire networks one can exchange Majorana…
Non-Abelian anyons such as Majorana zero modes (MZMs) have the potential to enable fault-tolerant quantum computing through topological protection. Experimentally reported InSb topological superconductor nanowires (TSNW) are investigated…
We provide a conceptual framework for developing a scalable topological quantum computer. It relies on forming Majorana fermions using circular electronic gates in two-dimensional p-wave superconductors. The gates allow the precise control…
Majorana fermions hold promise for quantum computation, because their non-Abelian braiding statistics allows for topologically protected operations on quantum information. Topological qubits can be constructed from pairs of well-separated…
Hybrid semiconductor-superconductor InAs-Al nanowires with uniform and defect-free crystal interfaces are one of the most promising candidates used in the quest for Majorana zero modes (MZMs). However, InAs nanowires often exhibit a high…
Structural analysis of self-catalyzed GaAs nanowires (NWs) grown on lithography-free oxide patterns is described with insight on their growth kinetics. Statistical analysis of templates and NWs in different phases of the growth reveals…
Advanced synthesis of semiconductor nanowires (NWs) enables their application in diverse fields, notably in chemical and electrical sensing, photovoltaics, or quantum electronic devices. In particular, Indium Arsenide (InAs) NWs are an…
Self assembled AlN nanowires (NWs) are grown by plasma assisted molecular beam epitaxy (PAMBE) on SiO2 / Si (111) substrates. Using a combination of in-situ reflective high energy electron diffraction and ex situ X ray diffraction (XRD), we…
We report on the selective-area chemical beam epitaxial growth of InAs in-plane, one-dimensional (1-D) channels using patterned SiO$_{2}$-coated InP(001), InP(111)B, and InP(110) substrates to establish a scalable platform for topological…
Nanowires (NWs) of topological materials are emerging as an exciting platform to probe and engineer new quantum phenomena that are hard to access in bulk phase. Their quasi-one-dimensional geometry and large surface-to-bulk ratio unlock new…