Related papers: A Silicon Cluster Based Single Electron Transistor…
The problem of resonant transport of strongly interacting electrons through a one-dimensional single-level vibrating quantum dot is being considered. In this paper, we generalize the Komnik and Gogolin model [Phys. Rev. Lett., 90, 246403,…
We study a putative (strange) metal-to-insulator transition in a granular array of the Sachdev-Ye-Kitaev (SYK) quantum dots, each occupied by a large number N>>1 of charge-carrying fermions. Extending the previous studies we complement the…
A few-electron double quantum dot was fabricated using metal-oxide-semiconductor(MOS)-compatible technology and low-temperature transport measurements were performed to study the energy spectrum of the device. The double dot structure is…
This paper reports the compatibility of heterostructure-based spin qubit devices with industrial CMOS technology. It features Si/Si-Ge quantum dot devices fabricated using Infineon's 200 mm production line within a restricted thermal…
Larger arrays of electron spin qubits require radical improvements in fabrication and device uniformity. Here we demonstrate excellent qubit device uniformity and tunability from 300K down to mK temperatures. This is achieved, for the first…
Electron transport through a quantum dot coupled to superconducting leads shows a sharp conductance onset when a quantum dot orbital level crosses the superconducting coherence peak of one lead. We study superconducting single electron…
We have incorporated an aluminum single electron transistor (SET) directly on top of a vertical quantum dot, enabling the use of the SET as an electrometer that is extremely responsive to the motion of charge into and out of the dot. Charge…
We investigate coherent control of a single electron trapped in a semiconductor quantum dot. Control is enabled with a strong laser field detuned with respect to the electron light-hole optical transitions. For a realistic experimental…
We report on the observation of non-metallic electrical conduction, resistive switching, and a negative temperature coefficient of resistance in cluster-assembled nanostructured gold films above the electrical percolation and in…
We theoretically study electronic transport through a layer of quantum dots connecting two metallic leads. By the inclusion of an inductor in series with the junction, we show that steady electronic transport in such a system may be…
For a capacitor made of a semiconducting carbon nanotube (CNT) suspended above a metallic gate, Coulomb correlations between individual electrons can lead to a capacitance that is much larger than the geometric capacitance. We argue that…
Fluctuation of Coulomb blockade peak spacings in large two-dimensional semiconductor quantum dots are studied within a model based on the electrostatics of several electron islands among which there are random inductive and capacitive…
Silicon spin qubits are promising candidates for realising large scale quantum processors, benefitting from a magnetically quiet host material and the prospects of leveraging the mature silicon device fabrication industry. We report the…
Ground state properties of the spin$-1/2$ Falicov-Kimball model on a triangular lattice in the presence of uniform external magnetic field are explored. Both the orbital and the Zeeman field-induced effects are taken into account and in…
We consider low temperature transport through a lateral quantum dot asymmetrically coupled to two conducting leads, and tuned to the mixed-valence region separating two adjacent Coulomb blockade valleys with spin S=1/2 and S=1 on the dot.…
We have fabricated a quantum dot single electron transistor based on an AlGaAs/GaAs heterostructure without any modulation doping. Our device is very stable from an electronic perspective, with clear Coulomb blockade oscillations, and…
Significant advances have been made towards fault-tolerant operation of silicon spin qubits, with single qubit fidelities exceeding 99.9%, several demonstrations of two-qubit gates based on exchange coupling, and the achievement of coherent…
A single-electron inverter was fabricated that switches from a high output to a low output when a fraction of an electron is added to the input. For the proper operation of the inverter, the two single-electron transistors that make up the…
We observe individual tunnel events of a single electron between a quantum dot and a reservoir, using a nearby quantum point contact (QPC) as a charge meter. The QPC is capacitively coupled to the dot, and the QPC conductance changes by…
We demonstrate the possibility of engineering a single donor transistor directly from a phosphorous doped quantum dot by making use of the intrinsic glassy behaviour of the structure as well as the complex electron dynamics during cooldown.…