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A high performance triple-heterojunction (3HJ) design has been previously proposed for tunneling FETs (TFETs). Compared with single heterojunction (HJ) TFETs, the 3HJ TFETs have both shorter tunneling distance and two transmission…
The potential barrier between source and gate in HEMTs and between source and channel in MOSFET controls the current output and the velocity injection of electrons in the channel [1], [2]. In non self aligned structures the electric field…
In our previous papers on ballistic quantum transport in nano-transistors [J. Appl. Phys. 98, 84308 (2005)] it was demonstrated that under certain conditions it is possible to reduce the three-dimensional transport problem to an effectively…
The spin of an electron confined in semiconductor quantum dots is currently a promising candidate for quantum bit (qubit) implementations. Taking advantage of existing CMOS integration technologies, such devices can offer a platform for…
Three-dimensional turbulence simulations of a RFX-mod diverted plasma are performed in the presence of a biasing electrode. The simulations show a strong suppression of turbulent transport caused by the induced $\mathbf{E}\times\mathbf{B}$…
Quantization in the inversion layer and phase coherent transport are anticipated to have significant impact on device performance in 'ballistic' nanoscale transistors. While the role of some quantum effects have been analyzed qualitatively…
A widely used technique to mitigate the gate leakage in the ultra-scaled metal oxide semiconductor field effect transistors (MOSFETs) is the use of high-k dielectrics, which provide the same equivalent oxide thickness (EOT) as $\rm SiO_2$,…
Realistic quantum gates operate at non-vanishing noise levels. Therefore, it is necessary to evaluate the performance of each device according to some experimentally observable criteria of device performance. In this presentation, the…
Transistors based on III-V semiconductor materials have been used for a variety of analog and high frequency applications driven by the high electron mobilities in III-V materials. On the other hand, the hole mobility in III-V materials has…
Extensive theoretical and experimental work has established high-fidelity electron shuttling in Si/SiGe systems, whereas demonstrations in Si/SiO2 (SiMOS) remain at an early stage. To help address this, we perform full 3D simulations of…
Recently, short channel effects (SCE) and power consumption dissipation problems pose big challenges which need imperative actions to be taken to deal with for field effect transistor to further scale down as semiconductor technology enters…
Noisy Intermediate-Scale Quantum (NISQ) devices fail to produce outputs with sufficient fidelity for deep circuits with many gates today. Such devices suffer from read-out, multi-qubit gate and crosstalk noise combined with short…
Three-dimensional integration technologies such as flip-chip bonding are a key prerequisite to realize large-scale superconducting quantum processors. Modular architectures, in which circuit elements are spread over multiple chips, can…
We investigated Capacitance-Voltage (C-V) characteristics of the Depletion Mode Buried Channel InGaAs/InAs Quantum Well FET by using Self-Consistent method incorporating Quantum Mechanical (QM) effects. Though the experimental results of…
Two-dimensional (2D) semiconductors show great potential to sustain Moore's law in the era of ultra-scaled electronics. However, their scalable applications are severely constrained by low hole mobility. In this work, we take 2D-GaAs as a…
Multiple-gate SOI MOSFETs with gate length equal to 25 nm are compared using device Monte Carlo simulation. In such architectures, the short channel effects may be controlled with much less stringent body and oxide thickness requirements…
Electrostatic control of the metal-insulator transition (MIT) in an oxide semiconductor could potentially impact the emerging field of oxide electronics. Vanadium dioxide is of particular interest due to the fact that the MIT happens in the…
Silicon offers an attractive material platform for hardware realization of quantum computing. In this study, a microscopic stochastic simulation method is developed to model the effect of random interface charge traps in silicon…
Nanofabricated metal gate electrodes are commonly used to confine and control electrons in electrostatically defined quantum dots. However, these same gates impart strain-induced potential fluctuations that can potentially impair device…
The gate bias dependency of conductivity is examined in two Si quantum wells with well thickness tw = 7 nm and tw = 14 nm. The conductivity of the thinner device behaves smoothly whereas the thicker device shows strong non-monotonic…