Multiple-gate SOI MOSFETs with gate length equal to 25 nm are compared using device Monte Carlo simulation. In such architectures, the short channel effects may be controlled with much less stringent body and oxide thickness requirements than in single-gate MOSFET. Our results highlight that planar double-gate MOSFET is a good candidate to obtain both high current drive per unit-width and weak subthreshold leakage with large integration density and aggressive delay time, compared to non planar devices such as triple-gate or quadruple-gate structures.
Cite
@article{arxiv.cond-mat/0505168,
title = {Comparison of multiple-gate MOSFET architectures using Monte Carlo simulation},
author = {J. Saint-Martin and A. Bournel and P. Dollfus},
journal= {arXiv preprint arXiv:cond-mat/0505168},
year = {2007}
}