Related papers: 8T SRAM Cell as a Multi-bit Dot Product Engine for…
Training of deep neural networks (DNNs) is a computationally intensive task and requires massive volumes of data transfer. Performing these operations with the conventional von Neumann architectures creates unmanageable time and power…
The Von Neumann bottleneck, a fundamental challenge in conventional computer architecture, arises from the inability to execute fetch and data operations simultaneously due to a shared bus linking processing and memory units. This…
Maintaining benefits of CMOS technology scaling is becoming challenging due to increased manufacturing complexities and unwanted passive power dissipations. This is particularly challenging in SRAM, where manufacturing precision and leakage…
Number Theoretic Transform (NTT) is an essential mathematical tool for computing polynomial multiplication in promising lattice-based cryptography. However, costly division operations and complex data dependencies make efficient and…
Embedded machine learning (ML) systems have now become the dominant platform for deploying ML serving tasks and are projected to become of equal importance for training ML models. With this comes the challenge of overall efficient…
Analog compute-in-memory (CIM) in static random-access memory (SRAM) is promising for accelerating deep learning inference by circumventing the memory wall and exploiting ultra-efficient analog low-precision arithmetic. Latest analog CIM…
In-memory computing is a promising approach to addressing the processor-memory data transfer bottleneck in computing systems. We propose Spin-Transfer Torque Compute-in-Memory (STT-CiM), a design for in-memory computing with Spin-Transfer…
The demand for edge artificial intelligence to process event-based, complex data calls for hardware beyond conventional digital, von-Neumann architectures. Neuromorphic computing, using spiking neural networks (SNNs) with emerging…
The memristor is promising to be the basic cell of next-generation computation systems. Compared to the traditional MOSFET device, the memristor is efficient over energy and area. But one of the biggest challenges faced with researchers is…
Developing ultra-low-energy superconducting computing and fault-tolerant quantum computing will require scalable superconducting memory. While conventional superconducting logic-based memory cells have facilitated early demonstrations,…
A compact, accurate, and bitwidth-programmable in-memory computing (IMC) static random-access memory (SRAM) macro, named CAP-RAM, is presented for energy-efficient convolutional neural network (CNN) inference. It leverages a novel…
Resistive Random Access Memory (RRAM) based in-memory computing (IMC) accelerators offer significant performance and energy advantages for deep neural networks (DNNs), but face three major limitations: (1) they support only \textit{static}…
Magneto-Electric FET (MEFET) is a recently developed post-CMOS FET, which offers intriguing characteristics for high speed and low-power design in both logic and memory applications. In this paper, for the first time, we propose a…
In energy-constrained scenarios such as IoT applications, the primary requirement for System-on-Chips (SoCs) is to increase battery life. However, when performing sub/near-threshold operations, the relatively large leakage current hinders…
The modern implementation of machine learning architectures faces significant challenges due to frequent data transfer between memory and processing units. In-memory computing, primarily through memristor-based analog computing, offers a…
Memristive in-memory computing (IMC) has emerged as a promising solution for addressing the bottleneck in the Von Neumann architecture. However, the couplingbetweenthecircuitandalgorithm in IMC makes computing reliability susceptible to…
Conventional 6T SRAM is used in microprocessors in the cache memory design. The basic 6T SRAM cell and a 6 bit memory array layout are designed in LEdit. The design and analysis of key SRAM components, sense amplifiers, decoders, write…
Using memristive properties common for the titanium dioxide thin film devices, we designed a simple write algorithm to tune device conductance at a specific bias point to 1% relative accuracy (which is roughly equivalent to 7-bit precision)…
This work presents a novel approach to configure 2T-nC ferroelectric RAM (FeRAM) for performing single cell logic-in-memory operations, highlighting its advantages in energy-efficient computation over conventional DRAM-based approaches.…
Sorting is fundamental and ubiquitous in modern computing systems. Hardware sorting systems are built based on comparison operations with Von Neumann architecture, but their performance are limited by the bandwidth between memory and…