Related papers: Characterizing Germanium Junction Transistors
An Early modeling approach of transistors characterized by simplicity and accuracy in representing intrinsic non-linearities is applied to the characterization of propagation delay and level transition switching properties of NPN and PNP…
Transistors are the cornerstone of modern electronics. Yet, their relatively complex characteristics, allied with often observed great parameter variation, remain a challenge for discrete and integrated electronics. Much of transistor…
A recently introduced Early modeling of transistors is applied to the study of the common collector amplifier (or emitter follower), an important type of electronic circuit typically employed as buffer, being characterized by near unit…
This work reports an approach to study complementary pairs of bipolar junction transistors, often used in push-pull circuits typically found at the output stages of operational amplifiers. After the data is acquired and pre-processed, an…
Bipolar junction transistors (BJTs) have been at the core of linear electronics from its beginnings. Although their properties can be well represented transport model equations, design and analysis approaches have, to a good extent, been…
A new type of radiation detector, a p-type modified electrode germanium diode, is presented. The prototype displays, for the first time, a combination of features (mass, energy threshold and background expectation) required for a…
Modern microelectronic devices are composed of interfaces between a large number of materials, many of which are in amorphous or polycrystalline phases. Modeling such non-crystalline materials using first-principles methods such as density…
To achieve high performance thermoelectric materials and devices, thermoelectric transistors, which integrate thermoelectric effects with transistor technology, represent a promising approach. Here p type Bi0.5Sb1.5Te3 and n type…
Neuromorphic devices, with their distinct advantages in energy efficiency and parallel processing, are pivotal in advancing artificial intelligence applications. Among these devices, memristive transistors have attracted significant…
We propose a characterization tool for studies of the band structure of new materials promising for the observation of topological phase transitions. We show that a specific resonant feature in the entropy per electron dependence on the…
Recent development in fabrication technology of planar two-dimensional (2D) materials has brought up possibilities of numerous novel applications. Our recent analysis has revealed that by definition of p-n junctions through appropriate…
The electronic, optical and magnetic properties of graphene nanoribbons (GNRs) can be engineered by controlling their edge structure and width with atomic precision through bottom-up fabrication based on molecular precursors. This approach…
Bottom-up assembled nanomaterials and nanostructures allow for the studies of rich and unprecedented quantum-related and mesoscopic transport phenomena. However, it can be difficult to quantify the correlations between the geometrical or…
Tunneling field-effect transistors (FETs) have been intensely explored recently due to its potential to address power concerns in nanoelectronics. The recently discovered graphene nanoribbon (GNR) is ideal for tunneling FETs due to its…
The upgrade of the Resistive Plate Chamber (RPC) detector, in order to increase the detector rate capability and to be able to work efficiently in high rate environment, consists in the reduction of the operating voltage along with the…
The speed of silicon-based transistors has reached an impasse in the recent decade, primarily due to scaling techniques and the short-channel effect. Conversely, graphene (a revolutionary new material possessing an atomic thickness) has…
Graphene nanoribbons (GNRs) are atomically precise stripes of graphene with tunable electronic properties, making them promising for room-temperature switching applications like field-effect transistors (FETs). However, challenges persist…
The aim of this work is to design and implement an embedded system capable to characterize some relevant figures of merit of Gallium Nitride and Silicon Carbide transistors in a wide range of frequencies. In particular, the designed system…
The absence of a band-gap in graphene limits the gate modulation of its electron conductivity, both in regular graphene as well as in PN junctions, where electrostatic barriers prove transparent to Klein tunneling. We demonstrate a novel…
Bottom-up synthesized GNRs and GNR heterostructures have promising electronic properties for high performance field effect transistors (FETs) and ultra-low power devices such as tunnelling FETs. However, the short length and wide band gap…