Related papers: Characterizing Germanium Junction Transistors
An analytical device model for a graphene nanoribbon phototransistor (GNR-PT) is presented. GNR-PT is based on an array of graphene nanoribbons with the side source and drain contacts, which is sandwiched between the highly conducting…
We study elementary semiconductors and insulators that are symmetric under spatial inversion: silicon, diamond, germanium, and black phosphorene. These materials are ideal candidates for realizing obstructed atomic insulators, which differ…
Gravitational waves have been instrumental in providing deep insights into the nature of gravity. Next-generation detectors, such as the Einstein Telescope, are predicted to have a higher detection rate given the increased sensitivity and…
The shrinking of transistor geometries as well as the increasing complexity of integrated circuits, significantly aggravate nonlinear design behavior. This demands accurate and fast circuit simulation to meet the design quality and…
Understanding the system-level spectral immittance response of capacitive energy storage devices with analytically tractable physics-based models is not only important for the progress of the technology, but also allows to develop new…
Graphene nanoribbons (GNRs) have been proposed as potential building blocks for field effect transistor (FET) devices due to their quantum confinement bandgap. Here, we propose a novel GNR device concept, enabling the control of both charge…
Nanobundle network transistors (NBTs) have emerged as a viable, higher performance alternative to poly-silicon and organic transistors with possible applications in macroelectronic displays, chemical/biological sensors, and photovoltaics. A…
Germanium ionization detectors with sensitivities as low as 100 eVee (electron-equivalent energy) open new windows for studies on neutrino and dark matter physics. The relevant physics subjects are summarized. The detectors have to measure…
Germanium and silicon-germanium alloys have found entry into Si technology thanks to their compatibility with Si processing and their ability to tailor electronic properties by strain and band-gap engineering. Germanium's potential to…
The new parameterization of the generalized parton distributions t-dependence is proposed. It allows one to reproduce sufficiently well the electromagnetic form factors of the proton and neutron at small and large momentum transfer. The…
This paper investigates the transient stability of power systems co-dominated by different types of grid-forming (GFM) devices. Synchronous generators (SGs and VSGs) and droop-controlled inverters are typical GFM devices in modern power…
Early detection of faults is of importance to avoid catastrophic accidents and ensure safe operation of machinery. A novel graph neural network-based fault detection method is proposed to build a bridge between AI and real-world running…
Although topological materials have recently seen tremendous development, their applications have remained elusive. Simultaneously, there exists considerable interest in pushing the limits of topological materials, including the exploration…
High-purity germanium (Ge) has re-emerged as a versatile semiconductor platform for spin-based quantum information processing because it combines mature materials processing, access to spin-free isotopes, high mobilities, small effective…
We investigate theoretically the performance advantages of all-graphene nanoribbon field-effect transistors (GNRFETs) whose channel and source/drain (contact) regions are patterned monolithically from a two-dimensional single sheet of…
We establish connections between the Transformer architecture, originally introduced for natural language processing, and Graph Neural Networks (GNNs) for representation learning on graphs. We show how Transformers can be viewed as message…
In this study, the germanium detector assembly, installed at the Accurate Neutron-Nuclear Reaction measurement Instruments (ANNRI) in the Material and Life Science Facility (MLF) operated by the Japan Proton Accelerator Research Complex…
Searching of optimal parameters of nanoelectronic devices is a primal problem in their modeling. We solve this problem on example of the electron ballistic switch in quantum network model. For this purpose, we use a computing scheme in…
Quantum electronic devices at the single impurity level demand an understanding of the physical attributes of dopants at an unprecedented accuracy. Germanium-based technologies have been developed recently, creating a necessity to adapt the…
Germanium is a strong candidate as a laser source for silicon photonics. It is widely accepted that the band structure of germanium can be altered by tensile strain so as to reduce the energy difference between its direct and indirect band…