Related papers: Valley qubit in gated MoS$_2$ monolayer quantum do…
An idea for a nanodevice in which an arbitrary sequence of three basic quantum single qubit gates - negation, Hadamard and phase shift - can be performed on a single electron spin. The spin state is manipulated using the spin-orbit coupling…
Silicon has many attractive properties for quantum computing, and the quantum dot architecture is appealing because of its controllability and scalability. However, the multiple valleys in the silicon conduction band are potentially a…
Electronic and spintronic devices rely on the fact that free charge carriers in solids carry electric charge and spin, respectively. There are, however, other properties of charge carriers that might be exploited in new families of devices.…
With the help of the spin-orbit interaction, we propose a scheme to perform holonomic single qubit gates on the electron spin confined to a quantum dot. The manipulation is done in the absence (or presence) of an applied magnetic field. By…
The valley degree of freedom in the electronic band structure of silicon, graphene, and other materials is often considered to be an obstacle for quantum computing (QC) based on electron spins in quantum dots. Here we show that control over…
We present here results of atomistic theory of electrons confined by metallic gates in a single layer of transition metal dichalcogenides. The electronic states are described by the tight-binding model and computed using a computational box…
We investigate a two-electron double quantum dot with both spin and valley degrees of freedom as they occur in graphene, carbon nanotubes, or silicon, and regard the 16-dimensional space with one electron per dot as a four-qubit logic…
We report the fabrication and characterization of gate-defined hole quantum dots in monolayer and bilayer WSe$_2$. The devices were operated with gates above and below the WSe$_2$ layer to accumulate a hole gas, which for some devices was…
Entangling gates between qubits are a crucial component for performing algorithms in quantum computers. However, any quantum algorithm must ultimately operate on error-protected logical qubits encoded in high-dimensional systems. Typically,…
Silicon-based metal-oxide-semiconductor quantum dots are prominent candidates for high-fidelity, manufacturable qubits. Due to silicon's band structure, additional low-energy states persist in these devices, presenting both challenges and…
A crucial requirement for scalable quantum-information processing is the realization of multiple-qubit quantum gates. Universal multiple-qubit gates can be implemented by a set of universal single qubit gates and any one kind of two-qubit…
An analogue of the Datta-Das spin FET is investigated, which is all-graphene and based on the valley degree of freedom of electrons / holes. The "valley FET" envisioned consists of a quantum wire of gapped graphene (channel) sandwiched…
A detailed understanding of the material properties that affect the splitting between the two low-lying valley states in Si/SiGe heterostructures will be increasingly important as the number of spin qubits is increased. Scanning gate…
Assisted with linear optical manipulation, single photon, entangled photon pairs, photon measurement, and classical communication, a scheme for two-spin qubits phase gate and teleportation of a CNOT gate between two electron spins from…
The rise of electron spin qubit architectures for quantum computing processors has led to a strong interest in designing and integrating ferromagnets to induce stray magnetic fields for electron dipole spin resonance (EDSR). The integration…
We have investigated the realizability of the controlled-NOT (CNOT) gate and characterized the gate operation by quantum process tomography for a chain of qubits, realized by electrons confined in self-assembled quantum dots embedded in the…
We implement silicon quantum dot devices with two layers of gate electrodes using a self-alignment technique, which allows for ultra-small gate lengths and intrinsically perfect layer-to-layer alignment. In a double quantum dot system, we…
We successfully demonstrated experimentally the electrical-field-mediated control of the spin of electrons confined in an SOI Quantum Dot (QD) device fabricated with a standard CMOS process flow. Furthermore, we show that the Back-Gate…
Monolayer $MoS_2$ is a typical valleytronic material with valley-spin locked valence bands. We numerically investigate the valley-spin polarized current in monolayer $\rm MoS_2$ via adiabatic electron pumping. By introducing an exchange…
Arrays of gate-defined semiconductor quantum dots are among the leading candidates for building scalable quantum processors. High-fidelity initialization, control, and readout of spin qubit registers require exquisite and targeted control…