Related papers: Band-pass superlattice magnetic tunnel junctions
Many exotic properties in rhombohedral (or ABC-stacked) multilayer graphene have recently been reported experimentally. In this Letter, we first reveal the underlying mechanism of spin degeneracy lifting in rhombohedral trilayer graphene.…
The primary requirement for achieving spin-selective electron transfer in a nanojunction possessing a magnetic system with zero net magnetization is to break the symmetry between the up and down spin sub-Hamiltonians. Circumventing the…
Magneto-transport properties in hybrid magnetic tunnel junctions (MTJs) integrating self-assembled monolayers (SAMs) as tunnel barriers are critically influenced by spinterface effects, which arise from the electronic properties at…
We propose energy bandpass filtering employed using the idea of anti-reflection heterostructures as a means to reduce the energy requirements of a superlattice phase change memory based on GeTe and Sb$_{2}$Te$_{3}$ heterostructures.…
The study of superconductor-ferromagnet interfaces has generated great interest in the last decades, leading to the observation of spin-aligned triplet supercurrents and 0-pi transitions in Josephson junctions where two superconductors are…
Efficient conversion of a spin signal into an electric voltage in mainstream semiconductors is one of the grand challenges of spintronics. This process is commonly achieved via a ferromagnetic tunnel barrier where non-linear electric…
A magnetic "spin filter" tunnel barrier, sandwiched between a non-magnetic metal and a magnetic metal, is used to create a new magnetoresistive tunnel device, somewhat analogous to an optical polarizer-analyzer configuration. The resistance…
Josephson junctions made with conventional s-wave superconductors and containing multiple layers of ferromagnetic materials can carry spin-triplet supercurrent in the presence of certain types of magnetic inhomogeneity. In junctions…
A new spintronic theory has been developed for the magnetic tunnel junction (MTJ) with single-crystal barrier. The barrier will be treated as a diffraction grating with intralayer periodicity, the diffracted waves of tunneling electrons…
We develop a symmetry indicator framework to efficiently predict the topology of superlattice-induced minibands with spin-orbit coupling. Our algorithm requires input only from the parent material before the superlattice is applied. The…
An important consequence of the discovery of giant magnetoresistance in metallic magnetic multilayers is a broad interest in spin dependent effects in electronic transport through magnetic nanostructures. An example of such systems are…
Switching of magnetic tunnel junction using femto-second laser enables a possible path for THz frequency memory operation, which means writing speeds 2 orders of magnitude faster than alternative electrical approaches based on spin transfer…
During the past 15 years a new field has emerged, which combines superconductivity and spintronics, with the goal to pave a way for new types of devices for applications combining the virtues of both by offering the possibility of…
Integrating semiconducting and magnetic materials could combine transistor-like operation with nonvolatility and enable architectures such as logic-in-memory. Here, we employ correlated electrical transport and scanning nitrogen-vacancy…
Magnetic molecules possess a high potential as building blocks for the design of spintronic devices. Moreover, the use of molecular materials opens the way for the controlled use of bottom-up, e.g. supramolecular, processing techniques…
Over the recent years, crossroads of magnetism and superconductivity led to the emerging field of superconducting spintronics. A cornerstone of this venture is the generation of equal-spin triplet Cooper pairs in superconductor-ferromagnet…
Using the Keldysh formalism the tunneling current through a hybrid structure where a confined magnetic insulator (I) is sandwiched between two non-magnetic leads is calculated. The leads can be either normal metals (M) or superconductors…
This paper proposes a novel spiking artificial neuron design based on a combined spin valve/magnetic tunnel junction (SV/MTJ). Traditional hardware used in artificial intelligence and machine learning faces significant challenges related to…
We propose energy band engineering to enhance tunneling electroresistance (TER) in ferroelectric tunnel junctions (FTJs). We predict that an ultrathin dielectric layer with a smaller band gap, embedded into a ferroelectric barrier layer,…
Magnetic tunnel junctions (MTJs) are the key building blocks of high-performance spintronic devices. While conventional MTJs rely on ferromagnetic (FM) materials, employing antiferromagnetic (AFM) compounds can significantly increase…