Related papers: Telecom wavelength single quantum dots with very s…
Nanowire (NW)-based opto-electronic devices require certain engineering in the NW geometry to realize polarized-dependent light sources and photodetectors. We present a growth procedure to produce InAs/InP quantum dot-nanowires (QD-NWs)…
We study the excitonic structure of CdSe/ZnSe self assembled quantum dots (SAQD) by magneto-photoluminescence (PL) spectroscopy. Using fixed 200 nm apertures through a metal film, we are able to probe single narrow (200 micro-eV)…
Dilute arrays of GaAs/AlGaAs modulation-doped quantum dots (QDs) fabricated by electron-beam lithography and low impact reactive-ion etching exhibit highly homogeneous luminescence. Single quantum dots display spectral emission with peak…
The deterministic realization of quantum light sources operating at telecom wavelengths is essential for long-distance fiber-based quantum communication and distributed quantum computing. In this work, we demonstrate that telecom O-band…
We study radiative linewidth of exciton resonance in shallow In$_x$Ga$_{1-x}$As/GaAs single quantum wells as a function of indium concentration in the range $x=0.02...0.10$ and well thickness in the range $L_Z=1...30$ nm using the method of…
We demonstrate sub-wavelength imaging of excitons confined to single CdTe quantum dots. By combining slit-confocal microscopy with a hemispherical solid immersion lens we simultaneously map the emission of thousands of single quantum dots…
By using a C3v symmetric (111) surface as a growth substrate, we are able to achieve high structural symmetry in self-assembled quantum dots, which are suitable for use as quantum-entangled photon emitters. Here we report on the wavelength…
We report on realization and transport spectroscopy study of single quantum dots (QDs) made from InSb nanowires grown by molecular beam epitaxy (MBE). The nanowires employed are 50-80 nm in diameter and the QDs are defined in the nanowires…
We present the direct heteroepitaxial growth of high-quality InGaAs quantum dots on silicon, enabling scalable, cost-effective quantum photonics devices compatible with CMOS technology. GaAs heterostructures are grown on silicon via a GaP…
InAs self-assembled quantum dots were grown on strained layers of GaxIn1-xP (0 < x < 0.3) on InP substrates. We show that the quantum dots have narrow vertical dimensions, ranging between 2 to 10 monolayers only. The dot layer…
Cathodoluminescence measurements on single InGaN/GaN quantum dots (QDs) are reported. Complex spectra with up to five emission lines per QD are observed. The lines are polarized along the orthogonal crystal directions [1 1 -2 0] and [-1 1 0…
Quantum dots stand out as the most advanced and versatile light-matter interface available today. Their ability to deliver high-quality, high-rate, and pure photons has set benchmarks that far surpass other emitters. Yet, a critical…
Long-range, terrestrial quantum networks will require high brightness single-photon sources emitting in the telecom C-band for maximum transmission rate. Many applications additionally demand triggered operation with high…
The integration of entangled photon emitters in nanophotonic structures designed for the broadband enhancement of photon extraction is a major challenge for quantum information technologies. We study the potential of quantum dot (QD)…
We report on photon coincidence measurement in a single GaAs self-assembled quantum dot (QD) using a pulsed excitation light source. At low excitation, when a neutral exciton line was present in the photoluminescence (PL) spectrum, we…
Long-distance quantum communication relies on the ability to efficiently generate and prepare single photons at telecom wavelengths. In many applications these photons must also be indistinguishable such that they exhibit interference on a…
A systematic study of the impact of annealing on the electronic properties of single InAs/GaAs quantum dots (QDs) is presented. Single QD cathodoluminescence spectra are recorded to trace the evolution of one and the same QD over several…
The energy levels and optical transitions of tetrahedral core/shell InP/ZnSe quantum dots (QDs) are investigated by means of multi-band k$\cdot$p theory. Despite the $\overline{T}_d$ symmetry relaxing spherical selection rules, the…
Cd(Se,Te) Quantum Dots (QD) in ZnSe barrier typically exhibit a very high spectral density, which precludes investigation of single dot photoluminescence. We design, grow and study individual Cd(Se,Te)/ZnSe QDs of low spectral density of…
Building a quantum internet requires efficient and reliable quantum hardware, from photonic sources to quantum repeaters and detectors, ideally operating at telecommunication wavelengths. Thanks to their high brightness and single-photon…