Cd(Se,Te) Quantum Dots (QD) in ZnSe barrier typically exhibit a very high spectral density, which precludes investigation of single dot photoluminescence. We design, grow and study individual Cd(Se,Te)/ZnSe QDs of low spectral density of emission lines achieved by implementation of a Mn-assisted epitaxial growth. We find an unusually large variation of exciton-biexciton energy difference (3 meV ≤ΔEX−XX≤ 26 meV) and of exciton radiative recombination rate in the statistics of QDs. We observe a strong correlation between the exciton-biexciton energy difference, exciton recombination rate, splitting between dark and bright exciton, and additionally the exciton fine structure splitting δ1 and Land\'e factor. Above results indicate that values of the δ1 and of the Land\'e factor in the studied QDs are dictated primarily by the electron and hole respective spatial shift and wavefunctions overlap, which vary from dot to dot due to a different degree of localization of electrons and holes in, respectively, CdSe and CdTe rich QD regions.
@article{arxiv.1603.00313,
title = {Effect of electron-hole separation on optical properties of individual Cd(Se,Te) Quantum Dots},
author = {Maciej Ściesiek and Jan Suffczyński and Wojciech Pacuski and Magdalena Parlińska-Wojtan and Tomasz Smoleński and Piotr Kossacki and Andrzej Golnik},
journal= {arXiv preprint arXiv:1603.00313},
year = {2016}
}