Related papers: Telecom wavelength single quantum dots with very s…
Quantum dots are promising candidates for deterministic single-photon sources, yet achieving high photon indistinguishability at telecom wavelengths remains a critical challenge. Here, we report a quantum dot-based single-photon source…
In the present work, the effect of resonant pumping schemes in improving the photon coherence is investigated on InAs/InGaAs/GaAs quantum dots emitting in the telecom C-band. The linewidths of transitions of multiple exemplary quantum dots…
Quantum networks have the potential to transform secure communication via quantum key distribution and enable novel concepts in distributed quantum computing and sensing. Coherent quantum light generation at telecom wavelengths is…
We demonstrate experimental results based on time-resolved photoluminescence spectroscopy to determine the oscillator strength (OS) and the internal quantum efficiency (IQE) of InGaAs quantum dots (QDs). Using a strain-reducing layer (SRL)…
We investigate the spin properties of charge carriers in vertically coupled InAs/InAlGaAs quantum dots grown by molecular beam epitaxy, emitting at telecom C-band wavelengths, with a silicon $\delta$-doped layer. Using time-resolved…
Embedding semiconductor quantum dots into bullseye resonators has significantly advanced the development of bright telecom quantum light sources for fiber-based quantum networks. To further improve the device flexibility and stability, the…
A systematic variation of the exciton fine-structure splitting with quantum dot size in single InAs/GaAs quantum dots grown by metal-organic chemical vapor deposition is observed. The splitting increases from -80 to as much as 520 $\mu$eV…
Tuning GaAs-based quantum emitters to telecom wavelengths makes it possible to use the existing mature technology for applications in, e.g., long-haul ultra-secure communication in the fiber networks. A promising method re-developed…
The combination of semiconductor quantum dots (QDs) with photonic cavities is a promising way to realize non-classical light sources with state-of-the-art performances in terms of brightness, indistinguishability and repetition rate. In the…
Efficient sources of individual pairs of entangled photons are required for quantum networks to operate using fibre optic infrastructure. Entangled light can be generated by quantum dots (QDs) with naturally small fine-structure-splitting…
The GaAs-based material system is well-known for the implementation of InAs quantum dots (QDs) with outstanding optical properties. However, these dots typically emit at a wavelength of around 900nm. The insertion of a metamorphic buffer…
The electronic structure of strain-engineered single InGaAs/GaAs quantum dots emitting in the telecommunication O band is probed experimentally by photoluminescence excitation spectroscopy. Observed resonances can be attributed to p-shell…
The implementation of fiber-based long-range quantum communication requires tunable sources of single photons at the telecom C-band. Stable and easy-to-implement wavelength- tunability of individual sources is crucial to (i) bring remote…
Creating single photons in the telecommunication wavelength range from semiconductor quantum dots (QDs) and interfacing them with spins of electrons or holes has been of high interest in recent years, with research mainly focusing on indium…
The dynamic response of InAsP quantum dots grown on InP(001) substrates by low-pressure Metalorganic Vapor Phase Epitaxy emitting around 1.55 $\mu$m, is investigated by means of time-resolved microphotoluminescence as a function of…
This work presents methods of controlling the density of self-assembled CdTe quantum dots (QDs) grown by molecular beam epitaxy. Two approaches are discussed: increasing the deposition temperature of CdTe and the reduction of CdTe layer…
To generate entangled photon pairs via quantum dots (QDs), the exciton fine structure splitting (FSS) must be comparable to the exciton homogeneous line width. Yet in the (In,Ga)As/GaAs QD, the intrinsic FSS is about a few tens $\mu$eV. To…
Materials with optical gain in the infrared are of paramount importance for optical communications, medical diagnostics and silicon photonics. The current technology is based either on costly III-V semiconductors that are not monolithic to…
Integrating light emitters based on III-V materials with silicon-based electronics is crucial for further increase in data transfer rates in communication systems since the indirect bandgap of silicon prevents its direct use as a light…
Excitonic fine structure splitting in quantum dots is closely related to the lateral shape of the wave functions. We have studied theoretically the fine structure splitting in InAs quantum dots with a type-II confinement imposed by a GaAsSb…