Creating single photons in the telecommunication wavelength range from semiconductor quantum dots (QDs) and interfacing them with spins of electrons or holes has been of high interest in recent years, with research mainly focusing on indium based QDs. However, there is not much data on the optical and spin properties of galliumantimonide (GaSb) QDs, despite it being a physically rich system with an indirect to direct bandgap crossover in the telecom wavelength range. Here, we investigate the (quantum-) optical properties of GaSb quantum dots, which are fabricated by filling droplet-etched nanoholes in an aluminum-galliumantimonide (AlGaSb) matrix. We observe photoluminescence (PL) features from isolated and highly symmetric QDs that exhibit narrow linewidth in the telecom S-band and show an excitonic fine structure splitting of ΔE=(12.0±0.5)μeV. Moreover, we perform time-resolved measurements of the decay characteristics of an exciton and measure the second-order photon autocorrelation function of the charge complex to g(2)(0)=0.16±0.02, revealing clear antibunching and thus proving the capability of this material platform to generate non-classical light.
@article{arxiv.2305.04384,
title = {Strain-free GaSb quantum dots as single-photon sources in the telecom S-band},
author = {Johannes Michl and Giora Peniakov and Andreas Pfenning and Joonas Hilska and Abhiroop Chellu and Andreas Bader and Mircea Guina and Sven Höfling and Teemu Hakkarainen and Tobias Huber-Loyola},
journal= {arXiv preprint arXiv:2305.04384},
year = {2023}
}