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Related papers: Strain-free GaSb quantum dots as single-photon sou…

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We demonstrate a new quantum-confined semiconductor material based on GaSb quantum dots (QDs) embedded in single-crystalline AlGaSb matrix by filling droplet-etched nanoholes. The droplet-mediated growth mechanism allows formation of low QD…

Mesoscale and Nanoscale Physics · Physics 2021-05-18 Abhiroop Chellu , Joonas Hilska , Jussi-Pekka Penttinen , Teemu Hakkarainen

Deterministic light sources capable of generating quantum states on-demand at wavelengths compatible with fiber optics and atmospheric transmission windows are essential for practical applications in quantum communication, distributed…

Epitaxially-grown semiconductor quantum dots (QDs) provide an attractive platform for the development of deterministic sources of high-quality quantum states of light. Such non-classical light sources are essential for quantum information…

Mesoscale and Nanoscale Physics · Physics 2023-08-30 Lucie Leguay , Abhiroop Chellu , Joonas Hilska , Esperanza Luna , Andrei Schliwa , Mircea Guina , Teemu Hakkarainen

Non-classical photon sources made of semiconductor quantum dots (QDs) emitting in the telecommunication C-band are crucial components for low-loss, long-distance photonic quantum communication networks. Here we designed and fabricated…

The development of deterministic single photon sources emitting in the telecommunication bands is a key challenge for quantum communication and photonic quantum computing. Here, we investigate the optical properties and single-photon…

Mesoscale and Nanoscale Physics · Physics 2025-05-30 Beatrice Costa , Bianca Scaparra , Xiao Wei , Hubert Riedl , Gregor Koblmüller , Eugenio Zallo , Jonathan Finley , Lukas Hanschke , Kai Müller

Understanding the carrier dynamics of nanostructures is the key for development and optimization of novel semiconductor nano-devices. Here, we study the optical properties and carrier dynamics of (InGa)(AsSb)/GaAs/GaP quantum dots (QDs) by…

Mesoscale and Nanoscale Physics · Physics 2021-10-04 Petr Steindl , Elisa Maddalena Sala , Benito Alén , Dieter Bimberg , Petr Klenovský

Due to their band-structure and optical properties, InAs/InP quantum dots (QDs) constitute a promising system for single-photon generation at third telecom window of silica fibers and for applications in quantum communication networks.…

Mesoscale and Nanoscale Physics · Physics 2020-05-20 P. Holewa , M. Gawełczyk , C. Ciostek , P. Wyborski , S. Kadkhodazadeh , E. Semenova , M. Syperek

Semiconductor quantum dots (QDs) enable the generation of single and entangled photons, useful for various applications in photonic quantum technologies. Specifically for quantum communication via fiber-optical networks, operation in the…

In this work we develop and study single-photon sources based on InGaAs quantum dots (QDs) emitting in the telecom O-band. The quantum devices are fabricated using in-situ electron beam lithography in combination with the thermocompression…

Applied Physics · Physics 2020-07-15 N. Srocka , P. Mrowiński , J. Große , M. von Helversen , T. Heindel , S. Rodt , S. Reitzenstein

Whereas the Si photonic platform is highly attractive for scalable optical quantum information processing, it lacks practical solutions for efficient photon generation. Self-assembled semiconductor quantum dots (QDs) efficiently emitting…

Quantum dots are promising candidates for deterministic single-photon sources, yet achieving high photon indistinguishability at telecom wavelengths remains a critical challenge. Here, we report a quantum dot-based single-photon source…

Semiconductor quantum dots embedded in hybrid circular Bragg gratings are a promising platform for the efficient generation of nonclassical light. The scalable fabrication of multiple devices with similar performance is highly desirable for…

The optical properties of single InAsP/InP quantum dots are investigated by spectrally-resolved and time-resolved photoluminescence measurements as a function of excitation power. In the short-wavelength region (below 1.45 $\mu$m), the…

We report on molecular beam epitaxy growth of symmetric InAs/InP quantum dots (QDs) emitting at telecom C-band (1.55 $\mu$m) with ultra-small excitonic fine-structure splitting of ~2 $\mu$eV. The QDs are grown on distributed Bragg reflector…

Applied Physics · Physics 2018-06-12 Andrei Kors , Johann Peter Reithmaier , Mohamed Benyoucef

Integrated quantum light source is increasingly desirable in large-scale quantum information processing.~Despite recent remarkable advances, new material platform is constantly being explored for the fully on-chip integration of quantum…

We report on the optical properties of single InAs/GaAs quantum dots emitting near the telecommunication O-band, probed via Coulomb blockade and non-resonant photoluminescence spectroscopy, in the presence of external electric and magnetic…

Mesoscale and Nanoscale Physics · Physics 2016-04-06 Luca Sapienza , Rima Al-Khuzheyri , Adetunmise Dada , Andrew Griffiths , Edmund Clarke , Brian D. Gerardot

Large-scale quantum networks require the implementation of long-lived quantum memories as stationary nodes interacting with qubits of light. Epitaxially grown quantum dots hold great potential for the on-demand generation of single and…

Significant progress in quantum light sources for quantum communication applications requires reproducible and symmetric quantum emitters acting as single-photon sources capable of generating entangled photons on demand at specific telecom…

Photonic integrated circuits find ubiquitous use in various technologies, from communication, to computing and sensing, and therefore play a crucial role in the quantum technology counterparts. Several systems are currently under…

Hereby, we present a comprehensive experimental and theoretical study of the electronic structure and optical properties of excitonic complexes in strain-engineered InGaAs/GaAs quantum dots (QDs) grown by metal-organic chemical vapour…

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