Time-Resolved characterization of InAsP/InP quantum dots emitting in the C-band telecommunication window

Richard Hostein; Adrien Michon; Gregoire Beaudoin; Noelle Gogneau; Gilles Patriache; Jean-Yves Marzin; Isabelle Robert-Philip; Isabelle Sagnes; Alexios Beveratos

doi:10.1063/1.2965112

Time-Resolved characterization of InAsP/InP quantum dots emitting in the C-band telecommunication window

Materials Science 2009-11-13 v1

Authors: Richard Hostein , Adrien Michon , Gregoire Beaudoin , Noelle Gogneau , Gilles Patriache , Jean-Yves Marzin , Isabelle Robert-Philip , Isabelle Sagnes , Alexios Beveratos

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Abstract

The dynamic response of InAsP quantum dots grown on InP(001) substrates by low-pressure Metalorganic Vapor Phase Epitaxy emitting around 1.55 $\mu$ m, is investigated by means of time-resolved microphotoluminescence as a function of temperature. Exciton lifetime steadily increases from 1 ns at low temperature to reach 4 ns at 300K while the integrated photoluminescence intensity decreases only by a factor of 2/3. These characteristics give evidence that such InAsP/InP quantum dots provide a strong carrier confinement even at room temperature and that their dynamic response is not affected by thermally activated non-radiative recombination up to room temperature.

Keywords

InAsP/InP quantum dots time-resolved photoluminescence C-band exciton lifetime carrier confinement

Cite

@article{arxiv.0807.3460,
  title  = {Time-Resolved characterization of InAsP/InP quantum dots emitting in the C-band telecommunication window},
  author = {Richard Hostein and Adrien Michon and Gregoire Beaudoin and Noelle Gogneau and Gilles Patriache and Jean-Yves Marzin and Isabelle Robert-Philip and Isabelle Sagnes and Alexios Beveratos},
  journal= {arXiv preprint arXiv:0807.3460},
  year   = {2009}
}

Time-Resolved characterization of InAsP/InP quantum dots emitting in the C-band telecommunication window

Abstract

Keywords

Cite

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