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Quantum anomalous Hall (QAH) insulators are two-dimensional (2D) insulating states exhibiting properties similar to those of quantum Hall states but without external magnetic field. They have quantized Hall conductance $\sigma^H=Ce^2/h$,…
High-quality Sb2Te3 films are obtained by molecular beam epitaxy on graphene substrate and investigated by in situ scanning tunneling microscopy/spectroscopy. Intrinsic defects responsible for the natural p-type conductivity of Sb2Te3 are…
Recently, the quantum spin Hall effect has been predicted in (111)-oriented thin films of SnSe and SnTe topological crystalline insulators. It was shown that in these films the energy gaps in the two-dimensional band spectrum depend in an…
Transient reflectivity (TR) from thin films (6 - 40 nm thick) of the topological insulator Bi2Se3 reveal ultrafast carrier dynamics, which suggest the existence of both radiative and non-radiative recombination between electrons residing in…
We study the practicability of achieving quantum anomalous Hall (QAH) effect with field-tunable Chern number in a magnetically doped, topologically trivial insulating thin film. Specifically in a candidate material,…
This study investigates the influence of indium doping on the defect states in (Bi0.3Sb0.7)2Te3 (BST) ternary topological insulators. Thin (10 nm) and thick (60 nm) films of pristine BST and indium-doped BST (In0.14(Bi0.3Sb0.7)1.86Te3) were…
Over a long period of exploration, the successful observation of quantized version of anomalous Hall effect (AHE) in thin film of magnetically-doped topological insulator completed a quantum Hall trio---quantum Hall effect (QHE), quantum…
The quantum anomalous Hall effect (QAHE), characterized by dissipationless quantized edge transport, relies crucially on a non-trivial topology of the electronic bulk bandstructure and a robust ferromagnetic order that breaks time-reversal…
Many proposals to generate a time-reversal invariant topological superconducting phase are based on imposing a $\pi$ phase difference between the superconducting leads proximitizing a nanostructure. We show that this phase can be induced on…
Ultrathin films of Na3Bi on insulating substrates are desired for opening a bulk band gap and generating the quantum spin Hall effect from a topological Dirac semimetal, though continuous films in the few nanometer regime have been…
We study the transverse spin-Seebeck effect (SSE) on the surface of a three-dimensional topological insulator (TI) thin film, such as Bi$_2$Se$_3$, which is sandwiched between two normal metal leads. The temperature bias $\Delta T$ applied…
Thin films of Topological insulators (TIs) coupled with ferromagnets (FMs) are excellent candidates for energy-efficient spintronics devices. Here, the effect of crystalline structural disorder of TI on interfacial and magnetic properties…
We present a microscopic theory of the chiral one-dimensional electron gas system localized on the sidewalls of magnetically-doped Bi$_2$Se$_3$-family topological insulator nanoribbons in the quantum anomalous Hall effect (QAHE) regime. Our…
Electrical field control of the carrier density of topological insulators (TI) has greatly expanded the possible practical use of these materials. However, the combination of low temperature local probe studies and a gate tunable TI device…
Topological insulators embody a new state of matter characterized entirely by the topological invariants of the bulk electronic structure rather than any form of spontaneously broken symmetry. Unlike the 2D quantum Hall or quantum…
Quantum anomalous Hall effect (QAHE) has been experimentally realized in magnetically-doped topological insulators or intrinsic magnetic topological insulator MnBi$_2$Te$_4$ by applying an external magnetic field. However, either the low…
The quantum anomalous Hall (QAH) state is a two-dimensional bulk insulator with a non-zero Chern number in absence of external magnetic fields. Protected gapless chiral edge states enable dissipationless current transport in electronic…
The quantum Hall effect is studied in the topological insulator BiSbTeSe$_2$. By employing top- and back-gate electric fields at high magnetic field, the Landau levels of the Dirac cones in the top and bottom topological surface states can…
Three dimensional (3D) topological insulators are quantum materials with a spin-orbit induced bulk insulating gap that exhibit quantum-Hall-like phenomena in the absence of applied magnetic fields. The proposed applications of topological…
Mechanical exfoliation of bulk crystals has been widely used to obtain thin topological insulator (TI) flakes for device fabrication. However, such a process produces only micro-sized flakes that are highly irregular in shape and thickness.…