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Intrinsically broken symmetries in the bulk of topological insulators (TIs) are manifested in their surface states. In spite of particle-hole asymmetry in TIs, it has often been assumed that their surface states are characterized by a…
Constructing heterostructures of a topological insulator (TI) with an undoped magnetic insulator (MI) is a clean and versatile approach to break the time-reversible symmetry in the TI surface states. Despite a lot of efforts, the strength…
A three-dimensional (3D) topological insulator (TI) is a quantum state of matter with a gapped insulating bulk yet a conducting surface hosting topologically-protected gapless surface states. One of the most distinct electronic transport…
Topological insulators (TIs) are materials with an insulating bulk characterized by a gapped band structure, along with gapless metallic surface states having a Dirac cone with a helical spin structure in momentum space. The helical…
The magnetic topological insulator MnBi$_{6}$Te$_{10}$ has emerged as a promising candidate for realizing the quantum anomalous Hall effect (QAHE), owing to its ability to retain ferromagnetism through precise control of anti-site defects.…
We study the three-dimensional topological insulator (Bi$_{1-x}$Sb$_{x}$)$_{2}$Te$_{3}$ in its ultrathin limit i.e. when the thickness is of the same order as the surface state penetration depth. It is expected that in this limit a…
We present a comprehensive study of the crystal structure of the thin-film, ferromagnetic topological insulator (Bi, Sb)$_{2-x}$V$_x$Te$_3$. The dissipationless quantum anomalous Hall edge states it manifests are of particular interest for…
We generalize the topological phase diagram of magnetic topological insulator (TI) thin films in an extended parameter space comprising out-of-plane (OP) and in-plane (IP) exchange fields in the presence of structural inversion asymmetry…
The development of nanoscale solid-state devices exploiting the promising topological surface states of topological insulator materials requires careful device engineering and improved materials quality. For instance, the introduction of a…
A simple surface band structure and a large bulk band gap have allowed Bi2Se3 to become a reference material for the newly discovered three-dimensional topological insulators, which exhibit topologically-protected conducting surface states…
Alloys of Bi$_2$Te$_3$ and Sb$_2$Te$_3$ ((Bi$_{1-x}$Sb$_x$)$_2$Te$_3$) have played an essential role in the exploration of topological surface states, allowing us to study phenomena that would otherwise be obscured by bulk contributions to…
The intricate interplay between light and matter provides effective tools for manipulating topological phenomena. Here, we theoretically propose and computationally show that circularly polarized light hold the potential to transform the…
The quantum anomalous Hall effect (QAHE) has been recently demonstrated in Cr- and V-doped three-dimensional topological insulators (TIs) at temperatures below 100 mK. In those materials, the spins of unfilled d-electrons in the transition…
We report the observation of second harmonic generation with high conversion efficiency $\sim 0.005\%$ in the terahertz regime from thin films of the topological insulator Bi$_2$Se$_3$ that exhibit the linear photogalvanic effect, measured…
The binary Bi-chalchogenides, Bi2Ch3, are widely regarded as model examples of a recently discovered new form of quantum matter, the three-dimensional topological insulator (TI) [1-4]. These compounds host a single spin-helical surface…
Inducing magnetism into topological insulators is intriguing for utilizing exotic phenomena such as the quantum anomalous Hall effect (QAHE) for technological applications. While most studies have focused on doping magnetic impurities to…
Atomically flat thin films of topological insulator Bi2Se3 have been grown on double-layer graphene formed on 6H-SiC(0001) substrate by molecular beam epitaxy. By a combined study of reflection high energy electron diffraction and scanning…
Magnetically doped topological insulators have been extensively studied over the past decade as a material platform to exhibit quantum anomalous Hall effect. Most material realizations are magnetically doped and despite material advances…
Strong spin-orbit coupling in topological insulators results in the ubiquitously observed weak antilocalization feature in their magnetoresistance. Here we present magnetoresistance measurements in ultra thin films of the topological…
Insulating substrates are crucial for electrical transport study and room temperature application of topological insulator films at thickness of only several nanometers. High quality quantum well films of Bi2Se3, a typical three-dimensional…