Quantum anomalous Hall (QAH) insulators are two-dimensional (2D) insulating states exhibiting properties similar to those of quantum Hall states but without external magnetic field. They have quantized Hall conductance σH=Ce2/h, where integer C is called the Chern number, and represents the number of gapless edge modes. Recent experiments demonstrated that chromium doped thin-film (Bi,Sb)2Te3 is a QAH insulator with Chern number C=±1. Here we theoretically predict that thin-film topological crystalline insulators (TCI) can host various QAH phases, when doped by ferromagnetically ordered dopants. Any Chern number between ±4 can, in principle, be reached as a result of the interplay between (a) the induced Zeeman field, depending on the magnetic doping concentration, (b) the structural distortion, either intrinsic or induced by a piezoelectric material through proximity effect and (c) the thickness of the thin film. The tunable Chern numbers found in TCI possess significant potential for ultra-low power information processing applications.
@article{arxiv.1306.0888,
title = {Large Chern Number Quantum Anomalous Hall Effect In Thin-film Topological Crystalline Insulators},
author = {Chen Fang and Matthew J. Gilbert and B. Andrei Bernevig},
journal= {arXiv preprint arXiv:1306.0888},
year = {2014}
}