Quantum anomalous Hall (QAH) insulators with high Chern number (C) enables multiple dissipationless edge channels for low-power-consumption electronics. We report the realization of multiple high-C QAH insulators including C=3,5,6, and 7 in twisted monolayer-rhombohedral pentalayer graphene. In twist angles of approximately 1.40{\deg}, we observe QAH effect with C=5 at a filling of one electron per moir\'e unit cell, persisting up to 2 Kelvin. Furthermore, incommensurate QAH insulators with C=5,6, and 7 emerge at partial fillings. In twist angles of 0.89{\deg}, Chern insulators with C=3 and C=6 appear at fillings of two and three electrons, respectively. Our findings establish twisted rhombohedral multilayer graphene as a highly tunable platform for multichannel, dissipationless electronics and for the exploration of exotic quantum Hall states beyond traditional Landau level paradigm.
@article{arxiv.2507.11347,
title = {Diverse high-Chern-number quantum anomalous Hall insulators in twisted rhombohedral graphene},
author = {Naitian Liu and Zhangyuan Chen and Jing Ding and Wenqiang Zhou and Hanxiao Xiang and Xinjie Fang and Linfeng Wu and Xiaowan Zhan and Le Zhang and Qianmei Chen and Kenji Watanabe and Takashi Taniguchi and Na Xin and Shuigang Xu},
journal= {arXiv preprint arXiv:2507.11347},
year = {2025}
}