The isospin flavors in condensed matters can be continuously broken, forming various symmetry-broken quantum states. In moir\'e crystals, the competition between different isospin configurations can be effectively tuned by the twist angles and staciking orders. Here we report twisted double rhombohedral-trilayer-gaphene as a new twisted crystalline flatbands system showing rich moir\'e dependent topological phenomena. In devices with small twist angles, programmable Chern insulators with Chern number C = 3 at integer moir\'e filling v = 1 have been observed. We have further revealed an exotic hidden order which can quench the Chern insulator as well as multiple first-order transitions between different symmetry-broken phases. Interestly, in the device with a slightly larger twist angle, multiple Chern insulators with C = 1 at fractional moir\'e fillings including v = 1/4, 1/3 and 1/2 have been observed, whereas the Chern insulator at v = 1 is abscent. Our study demonstrated the twisted flatbands form rhombohedral-multilayer-graphene as a new platform to study tunable high Chern insulators as well as new devices for quantum storage and computation.
@article{arxiv.2507.10875,
title = {Programmable Quantum Anomalous Hall Insulator in Twisted Crystalline Flatbands},
author = {Wenxuan Wang and Yijie Wang and Zaizhe Zhang and Zihao Huo and Gengdong Zhou and Kenji Watanabe and Takashi Taniguchi and X. C. Xie and Kaihui Liu and Zhida Song and Xiaobo Lu},
journal= {arXiv preprint arXiv:2507.10875},
year = {2026}
}