Related papers: Tailoring multilayer quantum wells for spin device…
Multi-valley spin relaxation in $n$-type GaAs quantum wells with in-plane electric field is investigated at high temperature by means of kinetic spin Bloch equation approach. The spin relaxation time first increases and then decreases with…
We calculate the spin relaxation time of mobile electrons due to spin precession between random impurity scattering (D'yakonov-Perel' mechanism) in electrically gated bilayer graphene analytically and numerically. Due to the trigonal…
Exciton, trion and electron spin dynamics in a 20 nm wide modulation-doped GaAs single quantum well are investigated using resonant ultrafast two-color Kerr rotation spectroscopy. Excitons and trions are selectively detected by resonant…
Ballistic spin resonance was experimentally observed in a quasi-one-dimensional wire by Frolov et al. [Nature (London) 458, 868 (2009)]. The spin resonance was generated by a combination of an external static magnetic field and the…
The spin diffusion/transport in $n$-type (001) GaAs quantum well at high temperatures ($\ge120$ K) is studied by setting up and numerically solving the kinetic spin Bloch equations together with the Poisson equation self-consistently. All…
The D'yakonov-Perel' spin relaxation induced by the spin-orbit interaction is examined in disordered two-dimensional electron gas. It is shown that, because of the electron-electron interactions different spin relaxation rates can be…
We study the effect of the impurity density on lifetimes and relaxation lengths of electron spins in the presence of a static electric field in a n-type GaAs bulk. The transport of electrons and the spin dynamics are simulated by using a…
Coherent electron spin dynamics in 10-nm-wide InGaAs/InAlAs quantum wells is studied from 10 K to room temperature using time-resolved Kerr rotation. The spin lifetime exceeds 1 ns at 10 K and decreases with temperature. By varying the…
We set up a set of many-body kinetic Bloch equations with spacial inhomogeneity. We reexamine the widely adopted quasi-independent electron model (QIEM) and show the inadequacy of this model in studying the spin transport. We further point…
Electron spin relaxation due to the D'yakonov-Perel' mechanism is investigated in bilayer graphene with only the lowest conduction band being relevant. The spin-orbit coupling is constructed from the symmetry group analysis with the…
GaAs/AlGaAs quantum well (QW) system is utilized to investigate the electron spin relaxation in the satellite X-valley of indirect band gap Al0.63Ga0.37As epitaxial layers through polarization resolved photo-luminescence excitation…
We have studied spin dephasing in a high-mobility two-dimensional electron system (2DES), confined in a GaAs/AlGaAs quantum well grown in the [110] direction, using the resonant spin amplification (RSA) technique. From the characteristic…
For the realisation of scalable solid-state quantum-bit systems, spins in semiconductor quantum dots are promising candidates. A key requirement for quantum logic operations is a sufficiently long coherence time of the spin system.…
We investigate the spin relaxation due to the random Rashba spin-orbit coupling in symmetric GaAs (110) quantum wells from the fully microscopic kinetic spin Bloch equation approach. All relevant scatterings, such as the electron-impurity,…
Spin relaxation was studied in a two-dimensional electron gas confined in a wide GaAs quantum well. Recently, the control of the spin relaxation anisotropy by diffusive motion was first shown in D. Iizasa et al., arXiv:2006.08253 (2020).…
The recently-discovered monolayer transition metal dichalcogenides (TMDCs) provide a fertile playground to explore new coupled spin-valley physics. Although robust spin and valley degrees of freedom are inferred from polarized…
We investigate theoretically the spin states in InAs/AlSb/GaSb broken-gap quantum wells by solving the Kane model and the Poisson equation self-consistently. The spin states in InAs/AlSb/GaSb quantum wells are quite different from those…
Time-resolved Kerr rotation spectroscopy is used to monitor the room temperature electron spin dynamics of optical telecommunication wavelength AlInGaAs multiple quantum wells lattice-matched to InP. We found that electron spin coherence…
Conduction electron spin lifetimes ($T_1$) and spin coherence times ($T_2$) are strongly modified in semiconductor quantum wells by electric fields. Quantitative calculations in GaAs/AlGaAs quantum wells at room temperature show roughly a…
Hole spin relaxation in $p$-type (111) GaAs quantum wells is investigated in the case with only the lowest hole subband, which is heavy-hole like in (111) GaAs/AlAs and light-hole like in (111) GaAs/InP quantum wells, being relevant. The…