Related papers: Tailoring multilayer quantum wells for spin device…

W. Apel and Yu.A. Bychkov have recently considered the spin relaxation in a 2D quantum Hall system for the filling factor close to unity [PRL v.82, 3324 (1999)]. The authors considered only one spin flip mechanism (direct spin-phonon…

We report a study of suppressed spin dephasing for quasi-one-dimensional electron ensembles in wires etched into a GaAs/AlGaAs heterojunction system. Time-resolved Kerr-rotation measurements show a suppression that is most pronounced for…

Nuclear spin coherence and relaxation dynamics of all constituent isotopes of an n-doped CdTe/(Cd,Mg)Te quantum well structure are studied employing optically detected nuclear magnetic resonance. Using time-resolved pump-probe Faraday…

We theoretically consider coherence times for spins in two quantum computer architectures, where the qubit is the spin of an electron bound to a P donor impurity in Si or within a GaAs quantum dot. We show that low temperature decoherence…

We present easily reproducible experimental conditions giving long electron spin relaxation and dephasing times at low temperature in a quantum well. The proposed system consists in an electron localized by a donor potential, and immerged…

We develop a microscopic theory of spin relaxation of a two-dimensional electron gas in quantum wells with anisotropic electron scattering. Both precessional and collision-dominated regimes of spin dynamics are studied. It is shown that, in…

In order to describe correctly the interplay of extrinsic and intrinsic spin-orbit mechanisms to the spin Hall effect, it is necessary to consider different sources of spin relaxation. We take into account the spin relaxation time…

In a semiconductor, collective excitations of spin textures usually decay rather fast due to D'yakonov-Perel' spin relaxation. The latter arises from spin-orbit coupling, which induces wave-vector-dependent spin rotations that, in…

We investigate the electron spin dephasing in the presence of spin phase recovering by a serried $\pi$-pulse sequence in $n$-type (001) GaAs quantum wells in a wide range of temperature and density regimes. Our numerical calculation is…

We present time-resolved Kerr rotation measurements of electron spin dynamics in a GaAs/AlGaAs heterojunction system that contains a high-mobility two-dimensional electron gas (2DEG). Due to the complex layer structure of this material the…

The spin relaxation time of electrons in GaAs and GaN are determined with a model that includes momentum scattering by phonons and ionized impurities, and spin scattering by the Elliot-Yafet, D'yakonov-Perel, and Bir-Aronov-Pikus…

An experimental technique for the indirect manipulation and detection of electron spins entangled in two-dimensional magnetoexcitons has been developed. The kinetics of the spin relaxation has been investigated. Photoexcited…

Solid-state electronic spin systems such as nitrogen-vacancy (NV) color centers in diamond are promising for applications of quantum information, sensing, and metrology. However, a key challenge for such solid-state systems is to realize a…

We investigate the performance of dynamical decoupling methods at suppressing electron spin decoherence from a low-temperature nuclear spin reservoir in a quantum dot. The controlled dynamics is studied through exact numerical simulation,…

Long spin coherence times of carriers are essential for implementing quantum technologies using semiconductor devices for which, however, a possible obstacle is spin relaxation. For the spin dynamics, decisive features are the band…

We investigate the quantum dynamics of the electron spin resonance of topological defects (edge state) in dimerized chains. These objects are discontinuities of the spin chain protected by the properties of the global system leading to a…

We report on the measurements of spin relaxation in GaAs quasi-one-dimensional mesowires, relying on spin noise spectroscopy, thus adding to the existing body of spin relaxation studies in bulk, two-dimensional and zero dimensional systems.…

Electronic structure calculations for layered zincblende semiconductors are described within a restricted basis formalism which naturally and non-perturbatively accomodates both crystalline inversion asymmetry and cubic anisotropy. These…

We report on efficient spin injection in p-doped InGaAs/GaAs quantum-dot (QD) spin light emitting diode (spin-LED) under zero applied magnetic field. A high degree of electroluminescence circular polarization (Pc) ~19% is measured in…

Qubits, the quantum mechanical bits required for quantum computing, must retain their fragile quantum states over long periods of time. In many types of electron spin qubits, the primary source of decoherence is the interaction between the…