Related papers: Efficient spin transport along Si $\langle$100$\ra…
We study theoretically the spin transport in a device in which the active layer is an organic film with numerous deep in-gap levels serving as traps. A carrier, diffusing between magnetized injector and detector, spends a considerable…
The development of spin-orbitronic devices, such as magneto-electric spin-orbit logic devices, calls for materials with a high resistivity and a high spin-charge interconversion efficiency. One of the most promising candidates in this…
Spin injection from a half-metallic electrode in the presence of thermal spin disorder is analyzed using a combination of random matrix theory, spin-diffusion theory, and explicit simulations for the tight-binding s-d model. It is shown…
Spin information processing is a possible new paradigm for post-CMOS (complementary metal-oxide semiconductor) electronics and efficient spin propagation over long distances is fundamental to this vision. However, despite several decades of…
The specific band structure of graphene, with its unique valley structure and Dirac neutrality point separating hole states from electron states has led to the observation of new electronic transport phenomena such as anomalously quantized…
A high reproducibility in the performance of cobalt/copper and permalloy/copper lateral spin valves with transparent contacts is obtained by optimizing the interface quality and the purity of copper. This allows us to study comprehensively…
A theoretical formulation for spin transport through an antiferromagnetic (AF) insulator is presented in the case driven/detected by direct/inverse spin Hall effect in two heavy metal contacts. The spin signal is shown to be transferred by…
Spin transport electronics - spintronics - focuses on utilizing electron spin as a state variable for quantum and classical information processing and storage. Some insulating materials, such as diamond, offer defect centers whose…
A longstanding goal of spintronics is to inject, coherently transport, and detect spins in a semiconductor nanowire where a SINGLE quantized subband is occupied at room temperature. Here, we report achieving this goal in 50-nm diameter InSb…
In the easy-plane regime of XXZ spin chains, spin transport is ballistic, with a Drude weight that has a discontinuous fractal dependence on the value of the anisotropy $\Delta = \cos \pi \lambda$ at nonzero temperatures. We show that this…
We have measured the thermal conductivity along different directions of the S = 1/2 one-dimensional (1D) spin system Sr2V3O9 in magnetic fields up to 14 T. It has been found that the thermal conductivity along the [10-1] direction,…
The finite spin lifetime in solids is often considered a major hindrance for the development of spintronic devices, which typically require cryogenic temperatures to mitigate this phenomenon. In this work we show that this feature can…
Ballistic hot electron transport overcomes the well-known problems of conductivity and spin lifetime mismatch that plagues spin injection in semiconductors with ferromagnetic ohmic contacts. Through the spin-dependent mean-free-path, it…
High-resolution tunneling electron spin transport properties (longitudinal spin current (LSC) and spin transfer torque (STT) maps) of topologically distinct real-space magnetic skyrmionic textures are reported by employing a 3D-WKB combined…
Spin transport in electric conductors is largely determined by two material parameters - spin diffusion length and spin Hall angle. In metals, these are typically determined indirectly by probing magnetoresistance in magnet/metal…
We investigate spin transport by thermally excited spin waves in an antiferromagnetic insulator. Starting from a stochastic Landau-Lifshitz-Gilbert phenomenology, we obtain the out-of-equilibrium spin-wave properties. In linear response to…
We propose a mechanism for detection of a single spin center on a non-magnetic substrate. In the detection scheme, the STM tunnel current is correlated with the spin orientation. In the presence of magnetic field, the spin precesses and the…
We experimentally demonstrate a Si spin metal-oxide-semiconductor field-effect transistor (MOSFET) that exhibits a high on/off ratio of source-drain current and spin signals at room temperature. The spin channel is non-degenerate n-type Si,…
Topological insulators (TIs) are a new class of quantum materials that exhibit spin momentum locking (SML) of massless Dirac fermions in the surface states. Usually optical methods, such as angle and spin-resolved photoemission…
Valence subband and transport properties of p-type metal-oxide-semiconductor (PMOS) inversion layer in uniaxially strained (110) and (111) Si channel have been studied theoretically in this work. Equal energy lines, carrier concentration…