Related papers: Efficient spin transport along Si $\langle$100$\ra…
We have investigated experimentally the non-local voltage signal (NLVS) in the lateral permalloy (Py)/Cu/Py spin valve devices with different width of Cu stripes. We found that NLVS strongly depends on the distribution of the spin-polarized…
The spin-orbit interaction in a solid couples the spin of an electron to its momentum. This coupling gives rise to mutual conversion between spin and charge currents: the direct and inverse spin Hall effects. The spin Hall effects have been…
We analyze the spin transport through a finite-size one-dimensional interacting wire connected to noninteracting leads. By combining renormalization-group arguments with other analytic considerations such as the memory function technique…
A quantitative investigation of spin-pumping-induced spin-transport in n-GaAs was conducted at room temperature (RT). GaAs has a non-negligible spin orbit interaction, so that electromotive force due to the inverse spin Hall effect (ISHE)…
We present a numerical study on the spin and thermal conductivities of the spin-1 Heisenberg chain in the high temperature limit, in particular of the Drude weight contribution and frequency dependence. We use the Exact Diagonalization and…
Using fully self consistent methods, we study spin transport in realistic, fabricable experimental spin valve systems consisting of two magnetic layers, a superconducting layer, and a spacer normal layer between the ferromagnets. Our…
We study high-field spin transport of electrons in a quasi one-dimensional channel of a $GaAs$ gate controlled spin interferometer (SPINFET) using a semiclassical formalism (spin density matrix evolution coupled with Boltzmann transport…
We have measured the thermal conductivity of the spin S=1 chain compound Y2BaNiO5. Analyzing the anisotropy of the thermal transport allows to identify a definite spin-mediated thermal conductivity \kappa_s along the chain direction. The…
We report a theoretical study on the spin and electron transport in the nonlocal lateral spin valve with non-collinear magnetic configuration. The nonlocal magnetoresistance, defined as the voltage difference on the detection lead over the…
We study temperature evolution of spin accumulation signals obtained by the three-terminal Hanle effect measurements in a nondegenerated silicon channel with a Schottky-tunnel-barrier contact. We find the clear difference in the…
The spin absorption process in a ferromagnetic material depends on the spin orientation relativelyto the magnetization. Using a ferromagnet to absorb the pure spin current created within a lateralspin-valve, we evidence and quantify a…
Spin accumulation and spin precession in single-layer graphene are studied by non-local spin valve measurements at room temperature. The dependence of the non-local magnetoresistance on electrode spacing is investigated and the results…
Efficient detection of spin-charge conversion is crucial for advancing our understanding of emergent phenomena in spin-orbit-coupled nanostructures. Here, we provide proof of principle of an electrical detection scheme of spin-charge…
We report the successful fabrication of lateral organic spin valves with a channel length in the sub $100\,nm$ regime. The fabication process is based on in-situ shadow evaporation under UHV conditions and therefore yields clean and…
Electrical spin injection and transport in silicon are central challenges for realizing semiconductor-based spintronic devices, particularly in p-type Si, where strong spin relaxation and interface effects often suppress detectable spin…
Silicon's weak intrinsic spin-orbit coupling and centrosymmetric crystal structure are a critical bottleneck to the development of Si spintronics, because they lead to an insignificant spin-Hall effect (spin current generation) and inverse…
Electrical injection of spin-polarized electrons into a semiconductor, large spin diffusion length, and an integration friendly platform are desirable ingredients for spin-based devices. Here we demonstrate lateral spin injection and…
The conversion of spin information into electrical signals is indispensable for spintronic technologies. Spin-to-charge conversion in ferromagnetic tunnel contacts is well-described using linear (spin-)transport equations, provided that…
We demonstrated that the spin injection/extraction efficiency is enhanced by an ultrathin Mg insertion layer (<= 2 nm) in Fe/Mg/MgO/n+-Si tunnel junctions. In diode-type vertical three-terminal devices fabricated on a Si substrate, we…
The discovery of new materials that efficiently transmit spin currents has been important for spintronics and material science. The electric insulator $\mathrm{Gd}_3\mathrm{Ga}_5\mathrm{O}_{12}$ (GGG) is a superior substrate for growing…