Related papers: A two-channel model for Spin-relaxation noise
The growing precision of optical and scattering experiments necessitates a better understanding of the influence of damping onto the collective mode of sheet electrons. As spin-polarized systems are of particular interest for spintronic…
The isolation of graphene has triggered an avalanche of studies into the spin-dependent physical properties of this material, as well as graphene-based spintronic devices. Here we review the experimental and theoretical state-of-art…
Spin relaxation in graphene is investigated in electrical graphene spin valve devices in the non-local geometry. Ferromagnetic electrodes with in-plane magnetizations inject spins parallel to the graphene layer. They are subject to Hanle…
We propose a model for magnetic noise based on spin-flips (not electron-trapping) of paramagnetic dangling-bonds at the amorphous-semiconductor/oxide interface. A wide distribution of spin-flip times is derived from the single-phonon…
Phonons are responsible for limiting both the electron mobility and the spin relaxation time in solids and provide a mechanism for thermal transport. In view of a possible transistor function as well as spintronics applications in graphene…
Recent experiments demonstrate that a ballistic version of spin resonance, mediated by spin-orbit interaction, can be induced in narrow channels of a high-mobility GaAs two-dimensional electron gas by matching the spin precession frequency…
With the motivation of improving the performance and reliability of aggressively scaled nano-patterned graphene field-effect transistors, we present the first systematic experimental study on charge and current distribution in multilayer…
By successive oxygen treatments of graphene non-local spin-valve devices we achieve a gradual increase of the contact resistance area products ($R_cA$) of Co/MgO spin injection and detection electrodes and a transition from linear to…
We present a generally applicable parameter-free first-principles method to determine electronic spin relaxation times and apply it to the technologically important group-IV materials silicon, diamond and graphite. We concentrate on the…
Spin qubits in semiconductor quantum dots are one of the promizing devices to realize a quantum processor. A better knowledge of the noise sources affecting the coherence of such a qubit is therefore of prime importance. In this work, we…
Characterizing charge noise is of prime importance to the semiconductor spin qubit community. We analyze the echo amplitude data from a recent experiment [Yoneda et al., Nat. Nanotechnol. 13, 102 (2018)] and note that the data shows small…
Random Telegraph Noise is a ubiquitous process manifesting across technology and the natural world. It is characterized by random jumps between two distinct states with Poissonian waiting times, and is the origin of 1/f noise. Understanding…
We propose nanoscale magnetometry via isolated single-spin qubits as a probe of superconductivity in two-dimensional materials. We characterize the magnetic field noise at the qubit location, arising from current and spin fluctuations in…
The 1/f noise in pentacene thin film transistors has been measured as a function of device thickness from well above the effective conduction channel thickness to only two conducting layers. Over the entire thickness range, the spectral…
We propose a three-terminal spin-valve setup, to determine experimentally the spin-dependent shot noise, which carries information on the spin-relaxation processes. Based on a spin-dependent Boltzmann-Langevin approach, we show that the…
We report a detailed investigation of resistance noise in single layer graphene films on Si/SiO$_2$ substrates obtained by chemical vapor deposition (CVD) on copper foils. We find that noise in these systems to be rather large, and when…
Graphene and other recently developed 2D materials exhibit exceptionally strong in-plane stiffness. Relaxation of few-layer structures, either free-standing or on slightly mismatched substrates occurs mostly through out-of-plane bending and…
Electrons in graphene are theoretically expected to retain spin states much longer than most materials, making graphene a promising platform for spintronics and quantum information technologies. Here, we use first-principles density-matrix…
A theory of spin-transport in hybrid normal metal - ferromagnetic electronic circuits is developed, taking into account non-collinear spin-accumulation. Spin-transport through resistive elements is described by 4 conductance parameters.…
In this letter we present the results of systematic experimental investigations of the effect of different chemical environments on the low frequency resistance fluctuations of single layer graphene field effect transistors (SLG-FET). The…