Related papers: A two-channel model for Spin-relaxation noise
We provide a transmission line representation for channels exhibiting spin-momentum locking (SML) which can be used for both time-dependent and steady-state transport analysis on a wide variety of materials with spin-orbit coupling such as…
Frequency dependent current noise in ferromagnetic double junctions with Coulomb blockade is studied theoretically in the limit of sequential tunneling. Two different relaxation processes are found in the correlations between spin polarized…
We propose a model of ripples in suspended graphene sheets based on plate equations that are made discrete with the periodicity of the honeycomb lattice and then periodized. In addition, the equation for the displacements with respect to…
We propose measurements of low-frequency noise in the tunneling current through a single molecule with a spin as an experimental probe for identifying a mechanism of the spin-dependent tunneling. A specific tail near the zero frequency in…
Using the method developed in a recent paper (Euro. Phys. J. B 92.8 (2019): 1-28) we consider $1/f$ noise in two-dimensional electron gas (2DEG). The electron coherence length of the system is considered as a basic parameter for…
Spin noise spectroscopy has become a widespread technique to extract information on spin dynamics in atomic and solid-state systems, in a potentially non-invasive way, through the optical probing of spin fluctuations. Here we experimentally…
We propose a mechanism for 1/f-type noise in hopping insulators based on the multi-electron charge redistribution within the specific aggregates of the localized states located in the vicinity of the critical resistors. We predict that the…
We consider spin effects related to the random spin-orbit interaction in graphene. Such a random interaction can result from the presence of ripples and/or other inhomogeneities at the graphene surface. We show that the random spin-orbit…
We propose a graphene device that can generate spin-dependent negative differential resistance (NDR). The device is composed of a sufficiently wide and short graphene and two gated EuO strips deposited on top of it. This scheme avoids…
We investigate the behavior of both pure spin and spin-polarized currents measured with four probe non-local and two probe local configurations up to room temperature and under external gate voltage in a lateral graphene transistor,…
We study a general model for non-gaussian $1/f$ noise based on an infinite range quantum Ising spin system in the paramagnetic state, or equivalently, interacting two-level classical fluctuators. We identify a dilatation interaction term in…
We investigate the anti-adiabatic limit of an anti-ferromagnetic S=1/2 Heisenberg chain coupled to Einstein phonons. The flow equation method is used to decouple the spin and the phonon part of the Hamiltonian. In the effective spin model…
Relativistic Brownian motion can be inexpensively demonstrated on a graphene chip. The interplay of stochastic and relativistic dynamics, governing the transport of charge carrier in graphene, induces noise-controlled effects such as (i) a…
We investigated the effect of the electron-beam irradiation on the level of the low-frequency 1/f noise in graphene devices. It was found that 1/f noise in graphene reveals an anomalous characteristic - it reduces with increasing…
We investigate the noise in single layer graphene devices from equilibrium to far from equilibrium and found that the 1/f noise shows an anomalous dependence on the source-drain bias voltage (VSD). While the Hooge relation is not the case…
We investigate transition rates between different spin configurations for $S \ge 1$ spins weakly coupled to a $d$-dimensional phonon bath. This study is motivated by understanding observed magnetization relaxation as a function of…
This paper presents a circuit performance benchmarking using the large-signal model of graphene field effect transistor reported in Part I of this two-part paper. To test the model, it has been implemented in a circuit simulator.…
Organic and carbon-based materials are attractive for spintronics because their small spin-orbit coupling and low hyperfine interaction is expected to give rise to large spin-relaxation times. However, the corresponding spin-relaxation…
A spin field effect transistor (FET) is proposed by utilizing a graphene nanoribbon as the channel. Similar to the conventional spin FETs, the device involves ferromagnetic metals as a source and drain; they, in turn, are connected to the…
Spin waves - the elementary excitations of magnetic materials - are prime candidate signal carriers for low dissipation information processing. Being able to image coherent spin-wave transport is crucial for developing interference-based…