Related papers: THz electrical writing speed in an antiferromagnet…
Recent interest in developing fast spintronic devices and laser-controllable magnetic solids has sparked tremendous experimental and theoretical efforts to understand and manipulate ultrafast dynamics in materials. Studies of spin dynamics…
Using an electric field instead of an electric current (or a magnetic field) to tailor the electronic properties of magnetic materials is promising for realizing ultralow energy-consuming memory devices because of the suppression of Joule…
Memristors are continuously tunable resistors that emulate synapses. Conceptualized in the 1970s, they traditionally operate by voltage-induced displacements of matter, but the mechanism remains controversial. Purely electronic memristors…
Thermally assisted magnetic writing is an important technology utilizing temperature dependent magnetic properties to enable orientation of a magnetic data storage medium. Using an atomistic spin model we study non-equilibrium field cooled…
Electrical-controllable antiferromagnet tunnel junction is a key goal in spintronics, holding immense promise for ultra-dense and ultra-stable antiferromagnetic memory with high processing speed for modern information technology. Here, we…
Replacing the ferromagnet with ferrimagnet (FiM) in the magnetic tunnel junction (MTJ) allows faster magnetization switching in picoseconds. The operation of a memory cell that consists of the MTJ and a transistor requires reversable…
The ultrafast control of magnetisation states in magnetically ordered systems is a key technological challenge for developing memory devices operable at picosecond timescales or terahertz (THz) frequencies. Despite significant efforts in…
Impact of spin transfer torque (STT) on the write error rate of a voltage-torque-based magnetoresistive random access memory is theoretically analyzed by using the macrospin model. During the voltage pulse the STT assists or suppresses the…
The balance between low power consumption and high efficiency in memory devices is a major limiting factor in the development of new technologies. Magnetic random access memories (MRAM) based on CoFeB/MgO magnetic tunnel junctions (MTJs)…
Optically induced demagnetization of 3d metallic ferromagnets proceeds as fast as ~100 fs and is a crucial prerequisite for spintronic applications, such as ultrafast magnetization switching and spin transport. On the 100 fs time scale, the…
Magnetic random access memory that uses magnetic tunnel junction memory cells is a high performance, non-volatile memory technology that goes beyond traditional charge-based memories. Today its speed is limited by the high magnetization of…
Voltage driven magneto-electric (ME) switching of ferro-magnets has shown potential for future low-energy spintronic memories. In this paper, we first analyze two different ME devices viz. ME-MTJ and ME-XNOR device with respect to…
Light pulses offer a faster, more energy-efficient, and direct route to magnetic bit writing, pointing toward a hybrid memory and computing paradigm based on photon transmission and spin retention. Yet progress remains hindered, as…
To design fast memory devices, we need material combinations which can facilitate fast read and write operation. We present a heterostructure comprising a two-dimensional (2D) magnet and a 2D topological insulator (TI) as a viable option…
It was demonstrated recently that on ultrashort time scales magnetization dynamics does not only exhibit precession but also nutation. Here, we investigate how nutation can contribute to spin switching leading towards ultrafast data…
Recent work [1,2] suggests that ferromagnetic reversal with spin transfer torque (STT) requires more current in a system in the presence of DMI than switching a typical ferromagnet of the same dimensions and perpendicular magnetic…
The ferroelectric material is an important platform to realize non-volatile memories. So far, existing ferroelectric memory devices utilize out-of-plane polarization in ferroelectric thin films. In this paper, we propose a new type of…
We demonstrate a non-volatile magnetoelectric magnonic memory (MEMM) that enables fully electrical write/read via direct magnon-driven sensing in an insulating antiferromagnet. A fabricated SrIrO3/La-BiFeO3/SrIrO3 trilayer exhibits sub-100…
Spin-memristors are a class of materials that can store memories through the control of spins, potentially leading to novel technologies that address the constraints of standard silicon electronics, thereby facilitating the advancement of…
A new class of spin-transfer torque magnetic random access memory (STT-MRAM) is discussed, in which writing is achieved using thermally initiated magnonic current pulses as an alternative to conventional electric current pulses. The…