Related papers: THz electrical writing speed in an antiferromagnet…
We numerically investigate the effect of magnetic and electrical damages at the edge of a perpendicular magnetic random access memory (MRAM) cell on the spin-transfer-torque (STT) efficiency that is defined by the ratio of thermal stability…
The demand for compact, high-speed and energy-saving circuitry urges higher efficiency of spintronic devices that can offer a viable alternative for the current electronics. The route towards this goal suggests implementing two-dimensional…
Recent results in electric-field control of magnetism have paved the way for the design of alternative magnetic and spintronic devices with enhanced functionalities and low power consumption. Among the diversity of reported magnetoelectric…
Heat-Assisted Magnetic Recording (HAMR) has promise to allow for data writing in hard disks of beyond 1 Tb/in2 areal density, by temporarily heating the area of a single datum to its Curie temperature while simultaneously applying a…
We propose a non-volatile memory element based on a lateral ferromagnetic Josephson junction with spin-orbit coupling and out-of-plane magnetization. The interplay between the latter and the intrinsic exchange field of the ferromagnet leads…
Bidirectional compression algorithms work by substituting repeated substrings by references that, unlike in the famous LZ77-scheme, can point to either direction. We present such an algorithm that is particularly suited for an external…
The reduction of the transition curvature of written bits in heat-assisted magnetic recording (HAMR) is expected to play an important role for the future areal density increase of hard disk drives. Recently a write head design with flipped…
Non-volatile magnetic storage, from 1940s magnetic core to present day racetrack memory and magnetic anisotropy switching devices rely on the metastability of magnetic domains to store information. However, the inherent inefficiency of…
Tuneable capacitors are vital for adaptive and reconfigurable electronics, yet existing approaches require continuous bias or mechanical actuation. Here we demonstrate a voltage-programmable ferroelectric memcapacitor based on HfZrO that…
We formulate a theory of spin-transfer torques in antiferromagnets, which covers the small to large limits of the exchange coupling energy relative to the kinetic energy of the inter-sublattice electron dynamics. Our theory suggests a…
Heavy computational demands from artificial intelligence (AI) leads the research community to explore the design space for functional materials that can be used for high performance memory and neuromorphic computing hardware. Novel device…
The discovery and precise manipulation of atomic-size conductive ferroelectric domain defects, such as geometrically confined walls, offer new opportunities for a wide range of prospective electronic devices, and the so-called walltronics…
The PZT/FeGa thin film memtranstor was prepared and the modulation of the magnetoelectric coefficient by external magnetic and electric fields was studied. The magnetoelectric coefficient of the PZT/FeGa memtranstor can be reversed by…
The resistance state of filamentary memristors can be tuned by relocating only a few atoms at interatomic distances in the active region of a conducting filament. Thereby the technology holds promise not only in its ultimate downscaling…
Spin-based memories are attractive for their non-volatility and high durability but provide modest resistance changes, whereas semiconductor logic transistors are capable of large resistance changes, but lack memory function with high…
In the quest for post-CMOS technologies, ferromagnetic skyrmions and their anti-particles have shown great promise as topologically protected solitonic information carriers in memory-in-logic or neuromorphic devices. However, the presence…
Non-volatile memory (NVM) devices that reliably operate at temperatures above 300 $^\circ$C are currently non-existent and remains a critically unmet challenge in the development of high-temperature (T) resilient electronics, necessary for…
Long-duration and efficient quantum memories for photons are key components of quantum repeater and network applications. To achieve long duration storage in atomic systems, a short-lived optical coherence can be mapped into a long-lived…
The magnetic phase transition is experimentally known to give rise to an anomalous temperature-dependence of the electron resistivity in ferromagnetic crystals. Phenomenological theories based on the interaction between itinerant electron…
The development of compact and tunable room temperature sources of coherent THz-frequency signals would open a way for numerous new applications. The existing approaches to THz-frequency generation based on superconductor Josephson…