Related papers: Ferroelectric Negative Capacitance Domain Dynamics
We present a theoretical study of spin-dependent transport through a ferromagnetic domain wall. With an increase of the number of components of the exchange coupling, we have observed that the variance of the conductance becomes half. As…
We study theoretically the influence of the underlying domain microstructure on the electromechanical properties of ferroelectrics. Our calculations are based on a continuum approach that incorporates the long-range elastic and…
We investigate oscillation dynamics of a periodic structure of the $180^\circ$ domain walls in nanometricaly thin substrate-deposited ferroelectric films and superlattices. We calculate dynamic permittivity of such structures and reveal a…
Field-induced domain wall dynamics in ferroelectric materials underpins multiple applications ranging from actuators to information technology devices and necessitates a quantitative description of the associated mechanisms including giant…
The properties of a ferroelectric, (001)-oriented, thin film clamped to a substrate are investigated analytically and numerically. The emphasis is on the tetragonal, polydomain, ferroelectric phase, using a three domain structure, as is…
The dynamical processes associated with electric field manipulation of the polarization in a ferroelectric remain largely unknown but fundamentally determine the speed and functionality of ferroelectric materials and devices. Here we apply…
Recent measurements on ultra-thin body Negative Capacitance Field Effect Transistors have shown subthreshold behaviors that are not expected in a classical MOSFET. Specifically, subthreshold swing was found to decrease with increased gate…
On the basis of phenomenological Ginzburg-Landau approach we investigate the problem of order parameter nucleation in hybrid superconductor/ferromagnetic systems with a domain structure in applied external magnetic field. Both the isolated…
The domain wall response under constant external magnetic fields reveals a complex behavior where sample disorder plays a key role. Furthermore, the response to alternating magnetic fields has only been explored in limited cases and…
Many proper and improper ferroelastic materials display (at sufficiently low measurement frequencies) a huge elastic softening below Tc. This giant elastic softening, which can be suppressed with uniaxial stress, is caused by domain wall…
Ferroelectric materials such as BaTiO3 exhibit spontaneous polarization that can be reoriented by an external electric field, forming the basis of various memory, actuator, and sensor applications. The polarization switching behavior,…
Ferroelectrics subject to suitable electric boundary conditions present a steady negative capacitance response. When the ferroelectric is in a heterostructure, this behavior yields a voltage amplification in the other elements, which…
With the development of ferroelectric memories, it is becoming increasingly important to understand the ferroelectric switching behaviors at small applied electric fields. In this \rv{paper}, we use discretized phase-field models to…
We investigated the perpendicular exchange bias (PEB) switching from negative- to positive-exchange bias state for Cr2O3/Pt/Co exchange coupling thin film system exhibiting positive exchange bias phenomena. By changing Pt spacer layer…
The influence of gate voltage, temperature and magnetic field on domain wall (DW) creep dynamics is investigated in Pt/Co/GdOx films with perpendicular magnetic anisotropy and imaged by a scanning magneto-optical Kerr effect technique. The…
Nanoscale ferroelectrics that can be integrated into microelectronic fabrication processes are highly desirable for low-power computing and non-volatile memory devices. However, scalable novel ferroelectric materials, such as hafnium oxide…
We present the first analytical study of stability loss and evolution of domain structure in inhomogeneous ferroelectric samples for exactly solvable model. The model assumes a short-circuited capacitor with two regions with slightly…
We calculated the frequency dependent dielectric response (electric susceptibility) of layered ferroelectric-dielectric junction, biased by the time-dependent harmonic voltage with single frequency $\omega$. Working point is stabilized, by…
HfO$_2$- and ZrO$_2$-based ferroelectric thin films have emerged as promising candidates for the gate oxides of next generation electronic devices. Recent work has experimentally demonstrated that a tetragonal/orthorhombic (t/o-) phase…
Ferroelectric domain walls have emerged as one of the most fascinating objects in condensed matter physics due to the broad variability of functional behaviors they exhibit. However, the vast majority of domain walls studies have been…