Related papers: Ferroelectric Negative Capacitance Domain Dynamics
The effect of domain walls on electron transport has been investigated in microfabricated Fe wires (0.65 to 20 $\mu m$ linewidths) with controlled stripe domains. Magnetoresistance (MR) measurements as a function of domain wall density,…
Compensated ferrimagnets are promising materials for fast spintronic applications based on domain wall motion as they combine the favourable properties of ferromagnets and antiferromagnets. They inherit from antiferromagnets immunity to…
Many-particle systems driven out of thermal equilibrium can show properties qualitatively different from any thermal state. Here, we study a ferrimagnet in a weak oscillating magnetic field. In this model, domain walls are not static, but…
The dynamics of transverse Neel domain wall in a ferromagnetic nanostrip in the presence of driving field, current and transverse magnetic field is investigated by the Landau-Lifshitz-Gilbert(LLG) equation with the adiabatic and…
Ferroelectric domain walls hold great promise for innovative applications in ferroelectric devices. However, the underlying mechanisms behind the observed giant conductance of charged domain walls remain poorly understood. Using a…
The authors have investigated magnetic domain wall induced capacitance variation as a tool for the detection of magnetic reversal in magnetic nanowires for in-plane (NiFe) and out-of-plane (Co/Pd) magnetization configurations. The switching…
Domain walls are of increasing interest in ferroelectrics because of their unique properties and potential applications in future nanoelectronics. However, the thickness of ferroelastic domain walls remains elusive due to the challenges in…
We theoretically study a ferrimagnetic domain-wall motion driven by a rotating magnetic field. We find that, depending on the magnitude and the frequency of the rotating field, the dynamics of a ferrimagnetic domain wall can be classified…
Charged polar interfaces such as charged ferroelectric domain walls or heterostructured interfaces of ZnO/(Zn,Mg)O and LaAlO3/SrTiO3, across which the normal component of electric polarization changes suddenly, can host large…
The advent of wurtzite ferroelectrics is enabling a new generation of ferroelectric devices for computer memory that has the potential to bypass the von Neumann bottleneck, due to their robust polarization and silicon compatibility.…
Ferroelectric domain walls are quasi-2D systems that show great promise for the development of non-volatile memory, memristor technology and electronic components with ultra-small feature size. Electric fields, for example, can change the…
Using Landau-Ginzburg-Devonshire theory we calculated numerically the static conductivity of both inclined and counter domain walls in the uniaxial ferroelectrics-semiconductors of n-type. We used the effective mass approximation for the…
Magnetite has long been investigated across many disciplines due to the interplay between its ferroic order parameters, namely its ferrimagnetism, ferroelasticity and ferroelectricty. Despite this, the experimental difficulty in measuring…
It is known that the permittivity of the ferroelectric films is affected by several phenomena, which deteriorate the material quality (e.g. the redistribution of the crystal lattice defects, appearance of the electrode-adjacent…
Flexible ferroelectrics possess significant potential for wearable electronics and bio-inspired devices, yet their electromechanical coupling mechanisms under dynamic bending remain elusive. This study employs phase-field simulations to…
The motion of a N\'eel-like ${180}^{\circ}$ domain wall induced by a time-dependent staggered spin-orbit field in the layered collinear antiferromagnet Mn$_2$Au is explored. Through an effective version of the two sublattice nonlinear…
We study the domain wall motion in a disordered weak ferromagnet, induced by injecting a spin current from a strong ferromagnet. Starting from the spin diffusion equation describing the spin accumulation in the weak ferromagnet, we…
Ferroelectricity is characterized by the presence of spontaneous and switchable macroscopic polarization. Scaling limits of ferroelectricity have been of both fundamental and technological importance, but the probes of ferroelectricity have…
Ferroelectric domain inversion and its effect on the stability of lithium niobate thin films on insulator (LNOI) are experimentally characterized. Two sets of specimens with different thicknesses varying from submicron to microns are…
The conductance of domain wall structures consisting of either stripes or cylindrical domains in multi-axial ferroelectric-semiconductors is analyzed. The effects of the domain size, wall tilt and curvature, on charge accumulation, are…