Ferroelectric domain inversion and its stability in lithium niobate thin film on insulator with different thicknesses
Abstract
Ferroelectric domain inversion and its effect on the stability of lithium niobate thin films on insulator (LNOI) are experimentally characterized. Two sets of specimens with different thicknesses varying from submicron to microns are selected. For micron thick samples (~28 um), domain structures are achieved by pulsed electric field poling with electrodes patterned via photolithography. No domain structure deterioration has been observed for a month as inspected using polarizing optical microscopy and etching. As for submicron (540 nm) films, large-area domain inversion is realized by scanning a biased conductive tip in a piezoelectric force microscope. A graphic processing method is taken to evaluate the domain retention. A domain life time of 25.0 h is obtained and possible mechanisms are discussed. Our study gives a direct reference for domain structure-related applications of LNOI, including guiding wave nonlinear frequency conversion, nonlinear wavefront tailoring, electro-optic modulation, and piezoelectric devices.
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Cite
@article{arxiv.1604.05444,
title = {Ferroelectric domain inversion and its stability in lithium niobate thin film on insulator with different thicknesses},
author = {Guang-hao Shao and Yu-hang Bai and Guo-xin Cui and Chen Li and Xiang-biao Qiu and De-qiang Geng and Di Wu and Yan-qing Lu},
journal= {arXiv preprint arXiv:1604.05444},
year = {2016}
}
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8 Pages