Related papers: Resolving and Tuning Carrier Capture Rates at a Si…
We demonstrate the trapping and manipulation of single neutral atoms in reconfigurable arrays of optical tweezers. Our approach offers unparalleled speed by using a Texas Instruments Digital Micro-mirror Device (DMD) as a holographic…
Precise control of doping in single nanowires (NWs) is essential for the development of NW-based devices. Here, we investigate a series of MBE-grown GaAs NWs with Be (p-type) and Si (n-type) doping using high-resolution cathodoluminescence…
We investigate the doping-dependence of the Seebeck coefficient, as calculated from the Kelvin formula, for the Fermi Hubbard model using determinantal quantum Monte Carlo simulations. Our key findings are: (1) Besides the expected hole to…
This work is related to developing entropy-stable positivity-preserving Discontinuous Galerkin (DG) methods as a computational scheme for Boltzmann-Poisson systems modeling the probability density of collisional electronic transport along…
The charge state stability of nitrogen-vacancy (NV) centers critically affects their application as quantum sensors and qubits. Understanding charge state conversion and equilibration is critical not only for NV centers in diamond but also…
In this study, sub-angstrom spatial resolution is achieved in mapping and spectroscopy of atoms and bonds within polygonal grain boundaries (GBs) of graphite using Scanning Tunneling Microscopy (STM). Robust van Hove singularities (VHS) are…
We present femtosecond transient transmission (or absorbance) measurements in silicon nanowires in the energy range 1.1-3.5 eV, from below the indirect band-gap to above the direct band-gap. Our pump-probe measurements allow us to give a…
Electrical detection methods for solid-state spins are attractive for quantum technologies, being readily chip-scalable and not subject to the small photon budgets of single emitters. However, realising electrical spin readout in…
Molecular electronics on silicon has distinct advantages over its metallic counterpart. We describe a theoretical formalism for transport through semiconductor-molecule heterostructures, combining a semi-empirical treatment of the bulk…
We present the design and performance of an ultra-high vacuum (UHV) scanning tunneling microscope (STM) that uses adiabatic demagnetization of electron magnetic moments for controlling its operating temperature in the range between 30 mK…
As silicon-based devices continue to shrink to the nanoscale, traps at the Si-SiO$_2$ interface pose increasing challenges to device performance. These traps reduce channel carrier mobility and shift threshold voltages in integrated…
As a potential candidate for quantum computation and metrology, the nitrogen vacancy (NV)center in diamond presented both challenges and opportunities resulted from charge state conversion. By utilizing different lasers for the…
We present detailed theoretical calculations of two color, time-resolved pump-probe differential reflectivity measurements. The experiments modeled were performed on InMnAs/GaSb heterostructures and showed pronounced oscillations in the…
A method is introduced to isolate and measure the electrical transport properties of individual single-walled carbon nanotubes (SWNTs) aligned on an ST-cut quartz, from room temperature down to 2 K. The diameter and chirality of the…
We introduce a novel control mode for Scanning Tunneling Microscopy (STM) that leverages di/dz feedback. By superimposing a high-frequency sinusoidal modulation on the control signal, we extract the amplitude of the resulting tunneling…
Layered transition metal dichalcogenides (TMDs) are ideal systems for exploring the effects of dimensionality on correlated electronic phases such as charge density wave (CDW) order and superconductivity. In bulk NbSe2 a CDW sets in at TCDW…
Pressure is a key parameter for tuning or revealing superconductivity in materials and compounds. Many measurements of superconducting phase transition temperatures have been conducted using diamond anvil cells (DACs), which provide a wide…
We show that the Second Derivative (SD) technique of the absorption spectra of Rb atomic vapours confined in a nanocell with a thickness $\ell= \lambda/2=398$ nm allows to achieve close to Doppler-free spectroscopy. Narrow linewidth and…
We present a scanning probe microscopy technique for spatially resolving transport in cold atomic gases, in close analogy with scanning gate microscopy in semiconductor physics. The conductance of a quantum point contact connected to two…
A high-granularity telescope system with a large sensitive area and low material budget has been developed for high-energy heavy ion beam tests. The telescope consists of nine layers of silicon microstrip detectors (SSDs), whose performance…