English

Constant di/dz Scanning Tunneling Microscopy: Atomic Precision Imaging and Hydrogen Depassivation Lithography on a Si(100) - 2 x 1 : H Surface

Systems and Control 2024-12-10 v1 Systems and Control

Abstract

We introduce a novel control mode for Scanning Tunneling Microscopy (STM) that leverages di/dz feedback. By superimposing a high-frequency sinusoidal modulation on the control signal, we extract the amplitude of the resulting tunneling current to obtain a di/dz measurement as the tip is scanned over the surface. A feedback control loop is then closed to maintain a constant di/dz, enhancing the sensitivity of the tip to subtle surface variations throughout a scan. This approach offers distinct advantages over conventional constant-current imaging. We demonstrate the effectiveness of this technique through high-resolution imaging and lithographic experiments on several Si(100)-2x1:H surfaces. Our findings, validated across multiple STM systems and imaging conditions, pave the way for a new paradigm in STM control, imaging, and lithography.

Keywords

Cite

@article{arxiv.2412.05729,
  title  = {Constant di/dz Scanning Tunneling Microscopy: Atomic Precision Imaging and Hydrogen Depassivation Lithography on a Si(100) - 2 x 1 : H Surface},
  author = {Richa Mishra and S. O. Reza Moheimani},
  journal= {arXiv preprint arXiv:2412.05729},
  year   = {2024}
}

Comments

14 pages, 18 figures