Related papers: Resolving and Tuning Carrier Capture Rates at a Si…
We study anomalies in the Coulomb blockade spectrum of a quantum dot formed in a silicon nanowire. These anomalies are attributed to electrostatic interaction with charge traps in the device. A simple model reproduces these anomalies…
We studied charge transport phenomena through a core substituted naphthalenediimide (NDI) single-molecule junctions using the electrochemical STM-based break junction technique in combination with DFT calculations. The conductance switch…
Using the Tight Binding (TB) parameters extracted from Density Functional Theory (DFT) and Recursive Green's Function method, it is shown that skewed-zigzag black phosphorous (phosphorene) nanoribbons obtain large and tuneable bandgap in…
Doping in transition metal dichalcogenide (TMD) monolayers provides a powerful method to precisely tailor their electronic, optical, and catalytic properties for advanced technological applications, including optoelectronics, catalysis, and…
One route to improved predictive modeling of magnetically confined fusion reactors is to couple transport solvers with direct numerical simulations (DNS) of turbulence, rather than with surrogate models. An additional challenge presented by…
Scanning tunneling microscopy (STM) and micro-electromechanical systems (MEMS) have traditionally addressed vastly different length scales - one resolving atoms, the other engineering macroscopic motion. Here we unite these two fields to…
The transport properties of diluted magnetic semiconductors (DMS) are calculated using dynamical mean field theory (DMFT) and Boltzmann transport theory. Within DMFT we study the density of states and the dc-resistivity, which are strongly…
Solids undergoing a transition from order to disorder experience the proliferation of topological defects. The melting process generates transient quantum states. However, their dynamical nature with femtosecond lifetime hinders exploration…
Time-domain thermoreflectance (TDTR) is a widely used technique for characterizing the thermal properties of bulk and thin-film materials. Traditional TDTR analyses typically focus on positive delay time data for fitting, often requiring…
In compressed sensing (CS), sparse signals can be reconstructed from significantly fewer samples than required by the Nyquist-Shannon sampling theorem. While non-sparse signals can be sparsely represented in appropriate transformation…
SrTiO$_3$ exhibits a superconducting dome upon doping with Nb, with a maximum critical temperature \mbox{$T_\mathrm{c} \approx 0.4$~K}. Using microwave stripline resonators at frequencies from 2 to 23~GHz and temperatures down to 0.02~K, we…
We investigated the effect of material choice and orientation in limiting source to drain tunneling (SDT) in nanowire (NW) p-MOSFETs. Si, Ge, GaSb, and Ge0.96Sn0.04 nanowire MOSFETs (NWFETs) were simulated using rigorous ballistic quantum…
Combining electron paramagnetic resonance (EPR) with scanning tunneling microscopy (STM) enables detailed insight into the interactions and magnetic properties of single atoms on surfaces. A requirement for EPR-STM is the efficient coupling…
We use time- and angle-resolved photoemission spectroscopy (TR-ARPES) combined with density functional theory to investigate ultrafast carrier dynamics in low-symmetry layered semiconducting PdSe$_2$. The indirect bandgap is determined to…
The transition metal dichalcogenide (TMD) $1T$-TaS$_{2}$ exhibits a rich set of charge density wave (CDW) orders. Recent investigations suggested that using light or electric field can manipulate the commensurate (C) CDW ground state. Such…
We demonstrate three-dimensional trapping of individual Rydberg atoms in holographic optical bottle beam traps. Starting with cold, ground-state $^{87}$Rb atoms held in standard optical tweezers, we excite them to $nS_{1/2}$, $nP_{1/2}$, or…
We report $^{93}$Nb and $^{121}$Sb NMR and $^{57}$Fe M\"{o}ssbauer studies combined with DFT calculations of Nb$_{1-x}$Ti$_x$FeSb ($0\leqslant x \leqslant0.3$), one of the most promising thermoelectric systems for applications above 1000 K.…
Silicon dangling bonds (DBs) on an adsorbate-covered Si(100) surface can be created in a scanning tunneling microscope (STM) with high precision required for a number of applications. However, vacancies containing DBs can diffuse,…
The rapid development of optical technologies and applications revealed the critical role of point defects affecting device performance. One of the powerful tools to study influence of defects on charge capture and recombination processes…
We present a study of the lower critical field, \hc1, of \STO as a function of carrier concentration with the aim of quantifying the superfluid density. At low carrier concentration (i.e. the underdoped side), superfluid density and the…